參數(shù)資料
型號(hào)： MB84VA2105
廠商： Fujitsu Limited
英文描述： 16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
中文描述： 1,600（× 8）閃存
文件頁(yè)數(shù)： 1/29頁(yè)
文件大?。?/td> 401K
代理商： MB84VA2105
DS05-50108-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
16M (
×
8) FLASH MEMORY &
1M (
×
8) STATIC RAM
MB84VA2104
-10
/MB84VA2105
-10
I
FEATURES
Power supply voltage of 2.7 to 3.6 V
High performance
100 ns maximum access time
Operating Temperature
–20 to +85
°
C
— FLASH MEMORY
Minimum 100,000 write/erase cycles
Sector erase architecture
One 16 K byte, two 8 K bytes, one 32 K byte, and thirty one 64 K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
MB84VA2104: Top sector
MB84VA2105: Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
Please refer to "MBM29LV160T/B" data sheet in detailed function
— SRAM
Power dissipation
Operating: 35 mA max.
Standby : 30
μ
A max.
Power down features using CE1s and CE2s
Data retention supply voltage: 2.0 V to 3.6 V
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關(guān)PDF資料
PDF描述
MB84VA2105-10 16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2106-10 Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:11; No. Strands x Strand Size:7 x 19; Jacket Material:Polyvinylchloride (PVC); Conductor Material:Copper; Jacket Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
MB84VA2106 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2107 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2107-10 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB84VA2105-10 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2106 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2106-10 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2107 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2107-10 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
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