參數(shù)資料
型號(hào): MB81ES171625-15WFKT-X
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
中文描述: 1M X 16 SYNCHRONOUS DRAM, 12 ns, UUC84
封裝: WAFER-84
文件頁(yè)數(shù): 1/43頁(yè)
文件大?。?/td> 551K
代理商: MB81ES171625-15WFKT-X
DS05-11408-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS
2
×
512 K
×
16 BIT / 2
×
256 K
×
32 BIT
SINGLE DATA RATE I
/
F FCRAM
TM
(Extended Temp. Version)
Consumer/Embedded Application Specific Memory for SiP
MB81ES171625/173225-15-X
I
DESCRIPTION
The Fujitsu MB81ES171625/173225 is a Fast Cycle Random Access Memory (FCRAM*) containing 16,777,216
bit memory cells accessible in a 2
×
512K
×
16 bit / 2
×
256K
×
32 bit format. The MB81ES171625/173225 features a
fully synchronous operation referenced to a positive edge clock same as that of SDRAM operation, whereby all
operations are synchronized at a clock input which enables high performance and simple user interface coexist-
ence.
The MB81ES171625/173225 is utilized using a Fujitsu advanced FCRAM core technology and designed for low
power consumption and low voltage operation than regular synchronous DRAM (SDRAM).
The MB81ES171625/173225 is dedicated for SiP (System in a Package), and ideally suited for various embedded/
consumer applications including digital AVs, and image processing where a large band width and low power
consumption memory is needed.
* : FCRAM is a trademark of Fujitsu Limited, Japan.
I
PRODUCT LINEUP
Parameter
MB81ES171625/173225-15-X
Clock Frequency (Max)
66.7 MHz
Burst Mode Cycle Time (Min)
CL
=
1
CL
=
2
CL
=
1
CL
=
2
30 ns
15 ns
Access Time From Clock (Max)
27 ns
12 ns
XRAS Cycle Time (Min)
75 ns
Operating Current (Max) (I
DD1
)
30 mA
Power Down Mode Current (Max) (I
DD2P
)
1 mA
Self-refresh Current (Max) (I
DD6
)
5 mA
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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