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參數(shù)資料
| 型號： | MB8118165A-60 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 1M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超級頁面存取模式動態(tài)RAM) |
| 中文描述： | 的CMOS 100萬× 16位的超頁模式動態(tài)RAM的CMOS（100萬× 16位超級頁面存取模式動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/30頁 |
| 文件大?。?/td> | 597K |
| 代理商： | MB8118165A-60 |
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DS05-10188-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 1M
×
16 BIT
HYPER PAGE MODE DYNAMIC RAM
MB8118165A-60/-70
CMOS 1,048,576
×
16 BIT Hyper Page Mode Dynamic RAM
I
DESCRIPTION
The Fujitsu MB8118165A is a fully decoded CMOS Dynamic RAM (DRAM) that contains 16,777,216 memory
cells accessible in 16-bit increments. The MB8118165A features a “hyper page” mode of operation whereby
high-speed random access of up to 1,024-bits of data within the same row can be selected. The MB8118165A
DRAM is ideally suited for mainframe, buffers, hand-held computers video imaging equipment, and other memory
applications where very low power dissipation and high bandwidth are basic requirements of the design. Since
the standby current of the MB8118165A is very small, the device can be used as a non-volatile memory in
equipment that uses batteries for primary and/or auxiliary power.
The MB8118165A is fabricated using silicon gate CMOS and Fujitsu’s advanced four-layer polysilicon and two-
layer aluminum process. This process, coupled with advanced stacked capacitor memory cells, reduces the
possibility of soft errors and extends the time interval between memory refreshes. Clock timing requirements
for the MB8118165A are not critical and all inputs are TTL compatible.
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ABSOLUTE MAXIMUM RATINGS (See NOTE)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
Value
Unit
Voltage at any pin relative to V
SS
V
IN
, V
OUT
–0.5 to +7.0
V
Voltage of V
CC
supply relative to V
SS
V
CC
–0.5 to +7.0
V
Power Dissipation
PD
1.0
W
Short Circuit Output Current
I
OUT
–50 to +50
mA
°
C
°
C
Operating Temperature
T
OPE
0 to 70
Storage Temperature
T
STG
–55 to +125
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
相關(guān)PDF資料 |
PDF描述 |
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| MB8118165A-70 | CMOS 1M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超級頁面存取模式動態(tài)RAM) |
| MB81V16165B-50 | 1 M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超級頁面存取模式動態(tài)RAM) |
| MB81V16165B-60 | 1 M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超級頁面存取模式動態(tài)RAM) |
| MB81V16400A-50 | CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4 位快速頁面存取模式動態(tài)RAM) |
| MB81V16400A-60 | CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4 位快速頁面存取模式動態(tài)RAM) |
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