參數(shù)資料
型號: MB81164442A-125L
廠商: Fujitsu Limited
英文描述: CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動態(tài)RAM)
中文描述: 的CMOS 4 × 4米× 16位同步動態(tài)隨機存取存儲器(SDRAM)(的CMOS 4 × 4米× 16位同步動態(tài)RAM)的
文件頁數(shù): 25/46頁
文件大?。?/td> 642K
代理商: MB81164442A-125L
25
MB81164442A-125/-100/-84/-67/-125L/-100L/-84L/-67L
I
ABSOLUTE MAXIMUM RATINGS (See WARNING)
WARNING:
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
I
RECOMMENDED OPERATING CONDITIONS
(Referenced to V
SS
)
Notes:
*1.
Overshoot limit: V
IH
(max) = TBD.
Undershoot limit: V
IL
(min) = –1.5 V with a pulsewidth
5 ns.
WARNING:
Recommended operating conditions are normal operating ranges for the semiconductor device. All
the device’s electrical characteristics are warranted when operated within these ranges.
Always use semiconductor devices within the recommended operating conditions. Operation outside
these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representative beforehand.
*2.
I
CAPACITANCE
(T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Value
Unit
Voltage of V
CC
Supply Relative to V
SS
V
CC
, V
CCQ
–0.5 to +4.6
V
Voltage at Any Pin Relative to V
SS
V
IN
, V
OUT
–0.5 to +4.6
V
Short Circuit Output Current
I
OUT
–50 to +50
mA
Power Dissipation
P
D
1.0
W
°
C
Storage Temperature
T
STG
–55 to +125
Parameter
Notes
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V
CC
, V
CCQ
3.0
3.3
3.6
V
V
SS
, V
SSQ
0
0
0
V
Input High Voltage
*1
V
IH
2.0
V
CC
+ 0.5
V
Input Low Voltage
*2
V
IL
–0.5
0.8
V
Ambient Temperature
T
A
0
70
°
C
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance, Address
C
IN1
5
pF
Input Capacitance, Except for address
C
IN2
5
pF
I/O Capacitance
C
I/O
7
pF
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