參數(shù)資料
型號: MB81164442A-100
廠商: Fujitsu Limited
英文描述: CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動態(tài)RAM)
中文描述: 的CMOS 4 × 4米× 16位同步動態(tài)隨機存取存儲器(SDRAM)(的CMOS 4 × 4米× 16位同步動態(tài)RAM)的
文件頁數(shù): 39/46頁
文件大?。?/td> 642K
代理商: MB81164442A-100
39
MB81164442A-125/-100/-84/-67/-125L/-100L/-84L/-67L
TIMING DIAGRAM – 8 : READ INTERRUPTED BY BURST STOP (EXAMPLE @ BL = 8)
CLK
Command
(CL = 2)
DQ
Command
(CL = 3)
DQ
Q
n
Q
n+1
Hi-Z
Hi-Z
Q
n+2
Q
n-1
Q
n-2
Q
n
Q
n+1
Q
n–1
Q
n–2
l
BSH
(2 clocks)
l
BSH
(3 clocks)
BST
BST
Notes:
1.
In a case of CL = 2 and BL = 8, “n” should be 1
n
6. When “n” is 7
n
8, the BST command takes no effect.
In a case of CL = 3 and BL = 8, “n” should be 1
n
5. When “n” is 6
n
8, the BST command takes no effect.
The BST command is valid for all burst lengthes (1, 2, 4, 8 and full column).
2.
TIMING DIAGRAM – 9 : WRITE INTERRUPTED BY BURST STOP (EXAMPLE @ BL = 2)
CLK
Command
DQ
LAST
DATA-IN
Masked
by BST
BST
COMMAND
相關(guān)PDF資料
PDF描述
MB81164442A-125 CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動態(tài)RAM)
MB81164442A-125L CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動態(tài)RAM)
MB81164442A-67 CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動態(tài)RAM)
MB81164442A-67L CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動態(tài)RAM)
MB81164442A-84 CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動態(tài)RAM)
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