參數(shù)資料
型號(hào): MB81117822A-84
廠商: Fujitsu Limited
英文描述: CMOS 2×1M ×8 Bit Synchronous Dynamic RAM(CMOS 2×1M ×8 位同步動(dòng)態(tài)RAM)
中文描述: 的CMOS 2 × 100萬(wàn)× 8位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器(2 × 100萬(wàn)的CMOS × 8位同步動(dòng)態(tài)RAM)的
文件頁(yè)數(shù): 38/43頁(yè)
文件大?。?/td> 275K
代理商: MB81117822A-84
38
MB81117822A-125/-100/-84/-67
TIMING DIAGRAM – 10 : WRITE INTERRUPTED BY PRECHARGE (Example @ CL = 3)
t
RP
(min)
t
RWL
(min)
CLK
Command
DQ
Data-In
Last
Data-In
Masked
by PRE
Note:
The precharge command (PRE) should only be issued after the t
RWL
of final data input is satisfied.
ACTV
Precharge
TIMING DIAGRAM – 11 : READ INTERRUPTED BY WRITE (Example @ CL = 3, BL =
4)
CLK
Command
DQM
DQ
Data Out
Masked
Data In
Data In
Note 1
Note 2
Note 3
Write
Read
Notes:
1.
First DQM makes high-impedance state High-Z between last output and first input data.
Second DQM makes internal output data mask to avoid bus contention.
Third DQM in illustrated above also makes internal output data mask. If burst read ends (final data output) at or after the
second clock of burst write, this third DQM is required to avoid internal bus contention.
2.
3.
I
DWD
(same clock)
I
OWD
(2 clocks)
I
DQZ
(2 clocks)
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