參數(shù)資料
型號(hào)： MB81116822A-125
廠商： Fujitsu Limited
英文描述： CMOS 2×1M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述： 的CMOS 2 × 100萬(wàn)× 8位超頁(yè)模式動(dòng)態(tài)RAM（2 × 100萬(wàn)的CMOS × 8位超級(jí)頁(yè)面存取模式動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 40/43頁(yè)
文件大?。?/td> 276K
代理商： MB81116822A-125
40
MB81116822A-125/-100/-84/-67
TIMING DIAGRAM – 14 : WRITE WITH AUTO-PRECHARGE
(Example @ CL = 2, BL = 2 Applied to same bank)
CLK
Command
DQM
DQ
Note:
Precharge at write with auto-precharge is started after the t
RWL
from the end of burst.
Even if the final data is masked by DQM, the precharge does not start the clock of final data input.
Once Auto-precharge command is asserted, no new command within the same bank can be issued.
Auto-precharge command doesn’t affect at full column burst operation except Burst Read & Single Write mode.
WRITA
ACTV
NOP or DESL
ACTV
t
RAS
(min) – t
RWL
(min)
D1
D2
t
RWL
(min) + t
RP
(min)
TIMING DIAGRAM – 15 : AUTO-REFRESH TIMING
t
RC
(min)
t
RC
(min)
CLK
Command
A
11
(BA)
REF
Command
NOP
Don’t Care
Don’t Care
BA
1
NOP
NOP
REF
NOP
4
Don’t Care
Notes:
1.
All banks should be precharged prior to the first Auto-refresh command (REF).
Bank select is ignored at REF command. The refresh address and bank select are selected by internal refresh counter.
Either NOP or DESL command should be asserted during t
RC
period while auto-refresh mode.
Any activation command such as ACTV or MRS command other than REF command should be asserted after
t
RC
from the last REF command.
2.
3.
4.
3
相關(guān)PDF資料
PDF描述
MB81116822A-67 CMOS 2×1M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
MB81116822A-84 CMOS 2×1M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
MB811171622A-100 CMOS 2×512K×16 Bit Synchronous Dynamic RAM(CMOS 2×512K×16 位同步動(dòng)態(tài)RAM)
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MB811171622A-67 CMOS 2×512K×16 Bit Synchronous Dynamic RAM(CMOS 2×512K×16 位同步動(dòng)態(tài)RAM)
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