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參數(shù)資料
| 型號： | MB3035S-E3/4W |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 144K |
| 代理商： | MB3035S-E3/4W |
New Product
M(B,I)3035S & M(B,I)3045S
Vishay General Semiconductor
Document Number: 88952
Revision: 12-Mar-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
Instantaneous Forward Voltage (V)
100
0.1
0.01
00.9
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
1
0.1
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Pulse Width = 300 s
1 % Duty Cycle
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
1000
0.1
0.001
10
100
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
1
20
10
90
80
70
60
50
40
30
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
0.01
100
Reverse Voltage (V)
10 000
100
0.1
100
J
u
nction
Capacitance
(pF)
110
1000
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Figure 6. Typical Transient Thermal Impedance
Figure 7. Typical Transient Thermal Impedance
t - Pulse Duration (s)
10
0.1
0.01
100
T
ransient
Ther
mal
Impedance
(°C/
W
)
110
1
0.1
Junction to Case
M(I)30xxS
t - Pulse Duration (s)
10
0.1
0.01
100
T
ransient
Ther
mal
Impedance
(°C/
W
)
110
1
0.1
Junction to Case
MB30xxS
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