參數(shù)資料
型號: MB251W
廠商: DIODES INC
元件分類: 橋式整流
英文描述: 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
封裝: ROHS COMPLIANT, METAL, MB-W, 4 PIN
文件頁數(shù): 1/4頁
文件大小: 64K
代理商: MB251W
DS21303 Rev. 7 - 3
1 of 4
MB15(W)/25(W)/35(W)
www.diodes.com
Diodes Incorporated
High Conductivity
Metal Case
Superior Thermal Design
Terminals Solderable per MIL-STD-202, Method 208
Universal Terminals; Snap-on, Solder or P.C. Board Mounting
Lead Free Finish, RoHS Compliant (Date Code 0514+)
(Note 2)
Characteristic
Symbol
-05
-1
-2
-4
-6
-8
-10
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average
MB15
Rectified Output Current
MB25
@ TC = 55
°C
MB35
I(AV)
15.0
25.0
35.0
A
Peak Forward Surge Current Single
MB15
Half Sine-Wave Superimposed on
MB25
Rated Load
MB35
IFSM
300
400
A
Maximum Instantaneous @ 7.5A
MB15
Forward Voltage Drop per @12.5A
MB25
Rated Load @17.5A
MB35
VF
1.1
1.2
V
Maximum Reverse DC current at Rated
@TA = 25
°C
DC Blocking Voltage (per Element)
@TA = 100
°C
IR
10
1.0
A
mA
I2t rating for fusing (8.3ms)
MB15
MB25
MB35
I2t
373
664
A2s
Typical Thermal Resistance (Note 1)
RqJC
2.5
°C/W
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150
°C
Features
Terminals: 0.25" Faston Terminals
Case material - UL Flammability Rating Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Approx Weight: 29 grams
Mounting Position: Bolt Down on Heat-sink with Silicone
Thermal Compound Between Bridge and Mounting Surface for
Maximum Heat Transfer Efficiency
Mounting Torque: 20 in. lb. Max.
Polarity: Polarity Symbols Marked on Case
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings and Electrical Characteristics
Notes:
1. Thermal Resistance from junction to case
2. EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex
Notes 5 and 7.
Mechanical Data
Suffix “W” denotes wire leads
MB15(W) / 25(W) / 35(W)
HIGH CURRENT SILICON BRIDGE RECTIFIER
MB-W
Dim
Min
Max
A
28.40
28.70
B
10.97
11.23
C
15.50
17.60
E
22.86
25.40
G
13.30
15.30
H
Hole for #10 screw
4.85
5.59
J
17.10
19.10
K
10.40
12.40
L
0.97
Nominal
1.07
M
30.50
N
10.97
11.23
P
17.10
19.10
C
A
G
E
B
H
(AC)
(+)
(-)
H
J
A
C
K
A
M
N
H
L
P
A
P
(AC)
(-)
(+)
相關(guān)PDF資料
PDF描述
MB15-10W 15 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
MB151 15 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
MB351 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
MB358 35 A, SILICON, BRIDGE RECTIFIER DIODE
MB356 35 A, SILICON, BRIDGE RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB251-W 功能描述:橋式整流器 25A 100V RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
MB251W-B 功能描述:橋式整流器 100V 25A RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
MB251W-BP 功能描述:橋式整流器 100V 25A RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
MB251W-F 制造商:Diodes Incorporated 功能描述:RECTFR BRIDGE SGL 100V 25A 4PIN MB-35W - Bulk
MB252 功能描述:橋式整流器 25A 200V RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube