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參數(shù)資料
| 型號： | MAZL000H |
| 廠商： | Panasonic Corporation |
| 英文描述： | Silicon planar type |
| 中文描述： | 硅平面型 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 64K |
| 代理商： | MAZL000H |
ESD Diodes
MAZL000H Series
Silicon planar type
1
Publication date: February 2002
SKE00011BED
For surge absorption circuit
I
Features
Four elements anode-common type
P
tot
=
200 mW
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Total power dissipation
*
P
tot
T
j
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
I
Common Electrical Characteristics
T
a
=
25
°
C
*1
Note)*: With a printed circuit board
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Zener voltage
*2
V
Z
I
Z
Specified value
V
Zener knee operating resistance
R
ZK
R
Z
I
R
I
Z
I
Z
V
R
Specified value
μ
A
Zener operating resistance
Specified value
Reverse current
Specified value
2.90
1.9
(0.95) (0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
0
+
–
0.30
+0.10
5
4
3
1
2
+0.20
5
10
Refer to the list of the
electrical characteristics
within part numbers
Internal Connection
5
2
4
3
1
Note) 1. Test method according to the JIS C7031 testing
2. Electrostatic breakdown voltage is
±
10 kV
Test method: IEC1000-4-2 (C
=
150 pF, R
=
330
, Contact discharge: 10 times)
3.*1: The V
Z
value is for the temperature of 25
°
C. In other cases, carry out the temperature compensation.
*2: Guaranteed at 20 ms after power application.
1: Cathode 1
2: Cathode 2
3: Cathode 3
4: Anode 1, 2
Anode 3, 4
5: Cathode 4
Mini5-G1 Package
EIAJ: SC-74A
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