BassMax, I2C, Volume and Gain Control
參數(shù)資料
型號: MAX9726BETP+T
廠商: Maxim Integrated Products
文件頁數(shù): 12/24頁
文件大?。?/td> 0K
描述: IC AMP AUDIO .124W STER 20TQFN
標(biāo)準(zhǔn)包裝: 2,500
系列: DirectDrive®
類型: AB 類
輸出類型: 耳機(jī),2-通道(立體聲)
在某負(fù)載時(shí)最大輸出功率 x 通道數(shù)量: 124mW x 2 @ 16 歐姆
電源電壓: 2.7 V ~ 5.5 V
特點(diǎn): 低音增強(qiáng)模式,消除爆音,I²C,靜音,短路和熱保護(hù),關(guān)機(jī),音量控制
安裝類型: 表面貼裝
供應(yīng)商設(shè)備封裝: 20-TQFN-EP(4x4)
封裝/外殼: 20-WFQFN 裸露焊盤
包裝: 帶卷 (TR)
MAX9726
DirectDrive, Headphone Amplifier with
BassMax, I2C, Volume and Gain Control
2
______________________________________________________________________________________________________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (5V Supply)
(VDD = SHDN = 5V, PGND = SGND = 0V, C1 = C2 = 1F, CPREG = CNREG = 1F, BM_ = 0V, RIN = 10kΩ, RF = 10kΩ, maximum vol-
ume (overall gain = 0dB), BassMax disabled. Load connected between OUT_ and PGND where specified. TA = TMIN to TMAX, unless
otherwise noted. Typical values are at TA = +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDD to PGND............................................................-0.3V to +6V
PVSS to SVSS .........................................................-0.3V to +0.3V
SGND to PGND .....................................................-0.3V to +0.3V
C1P to PGND..............................................-0.3V to (VDD + 0.3V)
C1N to PGND............................................(PVSS - 0.3V) to +0.3V
PVSS, SVSS to PGND ................................................+0.3V to -6V
IN_ to SGND...................................(SVSS - 0.3V) to (VDD + 0.3V)
FB_ to SGND ..................................(SVSS - 0.3V) to (VDD + 0.3V)
SDA, SCL to PGND ....................................-0.3V to (VDD + 0.3V)
SHDN to PGND ..........................................-0.3V to (VDD + 0.3V)
OUT_ to SGND ............................................................-3V to +3V
BM_ to SGND ..............................................................-3V to +3V
Duration of OUT_ Short Circuit to PGND....................Continuous
Continuous Current Into/Out of:
VDD, C1P, PGND, C1N, PVSS, SVSS, or OUT_ ...........±850mA
Any Other Pin................................................................±20mA
Continuous Power Dissipation (TA = +70°C, multilayer board)
20-Bump UCSP (derate 10mW/°C above +70°C) .......800mW
20-Pin TQFN (derate 25.6mW/°C above +70°C) .......2051mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
OUTL and OUTR ESD Protection (Human Body Model)....±7.5kV
Bump Temperature (soldering) Reflow............................+230°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
GENERAL
Supply Voltage Range
VDD
2.7
5.5
V
Quiescent Supply Current
IDD
No load
5.5
10
mA
Shutdown Supply Current
IDD_SHDN
SHDN = 0V
8
15
A
Turn-On Time
tON
440
s
Turn-Off Time
tOFF
1s
Thermal-Shutdown Threshold
TTHRES
+150
°C
Thermal-Shutdown Hysteresis
THYST
12
°C
HEADPHONE AMPLIFIER
Output Offset Voltage
VOSHP
Measured between OUT_ and SGND, gain
= 0dB, RIN = RF = 10k
Ω, TA = +25°C
(Note 2)
±0.6
10
mV
Input Offset Voltage of Input
Amplifier
VOS
Referenced to SGND, measured between
FBR, FBL, and SGND
3mV
Input Bias Current
IB
±20
±100
nA
BMR, BML Input Bias Current
IBIAS_BB
±20
±100
nA
DC, VDD = 2.7V to 5.5V
80
97
f = 1kHz, 100mVP-P ripple
85
Power-Supply Rejection Ratio
(Note 2)
PSRR
f = 20kHz, 100mVP-P ripple
74
dB
RL = 16
Ω
124
Output Power
POUT
THD+N = 1%,
fIN = 1kHz
RL = 32
Ω
104
mW
RL = 16
Ω, POUT = 15mW, fIN = 1kHz
0.04
Total Harmonic Distortion Plus
Noise
THD+N
RL = 32
Ω, POUT = 30mW, fIN = 1kHz
0.02
%
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