
M
Quad Bus LVDS Transceiver in 44 QFN
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
V
CC
, AV
CC
to GND................................................-0.3V to +4.0V
DO_+/RIN_+, DO_-/RIN_- to GND ........................-0.3V to +4.0V
DIN_, DE_,
RE_
to GND.........................................-0.3V to +4.0V
RO_ to GND................................................-0.3V to (V
CC
+ 0.3V)
AGND to GND.......................................................-0.3V to +0.3V
Short-Circuit Duration (DO_+/RIN_+, DO_-/RIN_-)....Continuous
Continuous Power Dissipation (T
A
= +70
°
C)
44-Lead QFN (derate 24.3mW/
°
C above +70
°
C)......2105mW
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 3.0V to 3.6V, R
L
= 27
±1%, receiver differential input voltage |V
ID
| = 0.1V to 3.0V, receiver input common-mode voltage
V
CM
= 0.05V to 2.4V, receiver input voltage range = 0V to 3.0V, DE_ = high,
RE_
= low, T
A
= -40
°
C to +85
°
C, unless otherwise noted.
Typical values are at V
CC
= 3.3V, |V
ID
| = 0.2V, V
CM
= 1.2V, and T
A
= +25
°
C.) (Notes 1 and 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Storage Temperature Range.............................-65
°
C to +150
°
C
Maximum Junction Temperature .....................................+150
°
C
Operating Temperature Range ...........................-40
°
C to +85
°
C
ESD Protection
Human Body Model (DO_+/RIN_+, DO_-/RIN_-).............±4kV
Lead Temperature (soldering, 10s).................................+300
°
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
BLVDS (DO_+/RIN_+, DO_-/RIN_-)
Differential Input High Threshold
Differential Input Low Threshold
V
TH
V
TL
DE_ = low
DE_ = low
0.1V
≤
VID
≤
0.6V, DE_ = low
0.6V <
VID
≤
1.2V, DE_ = low
V
CC
= 3.6V, 0V or open, Figure 1
V
CC
= 3.6V, 0V or open, Figure 1
0.1V
≤
VID
≤
0.6V, V
CC
= 0V or open
0.6V <
VID
≤
1.2V, V
CC
= 0V or open
Figure 2
4.0
-4.3
±
1.7
±
2.3
100
mV
mV
-100
-15
-20
53
148
-15
-20
250
+15
+20
Input Current
I
IN+
, I
IN-
μA
R
IN1
R
IN2
I
INO+
,
I
INO-
V
OD
Input Resistance
k
±
0.9
±
1.9
398
+15
+20
460
Power-Off Input Current
μA
Differential Output Voltage
mV
Change in Magnitude of VOD for
Complementary Output States
V
OD
Figure 2
1
25
mV
Offset Voltage
V
OS
Figure 2
1.185
1.274
1.435
V
Change in Magnitude of VOS for
Complementary Output States
V
OS
Figure 2
1.9
25
mV
Output High Voltage
Output Low Voltage
V
OH
V
OL
Figure 2
Figure 2
1.473
1.075
1.650
V
V
0.950
DIN_ = high, DO_+/RIN_+ = 0V or
V
CC
, DO_-/RIN_- = 0V or V
CC
-30
+30
Output Short-Circuit Current
I
OS
DIN_ = low, DO_-/RIN_- = 0V or
V
CC
, DO_+/RIN_+ = 0V or V
CC
-30
+30
mA