
2
Maxim Integrated
MAX9092/MAX9093/MAX9094/MAX9095
General-Purpose, Low-Voltage,
Dual/Quad, Tiny Pack Comparators
Supply Voltage (VDD to VSS)...................................-0.3V to +6V
All Other Pins except OUT_ .......... (VSS - 0.3V) to (VDD + 0.3V)
OUT_ .................................................................(VSS - 0.3) to 6V
Differential Input Voltage (IN_+, IN_-)............................... ±3.6V
Continuous Power Dissipation (Multilayer Board)(TA = +70NC)
SOT23 (derate 5.1mW/°C above +70°C) ................408.2mW
MAX (derate 4.8mW/°C above +70°C)..................387.8mW
TSSOP (derate 10mW/°C above +70°C)....................796mW
SO (derate 11.9mW/°C above +70°C) .......................952mW
Operating Temperature Range........................ -40NC to +125NC
Junction Temperature .....................................................+150NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS—2.7V OPERATION
(VDD = 2.7V, VSS = 0V, VCM = 0V, RL = 5.1kI connected to VDD, typical values are at TA = +25NC, unless otherwise noted. Boldface
limits apply at the defined temperature extremes.) (Note 2)
SOT23
Junction-to-Ambient Thermal Resistance (
qJA) ........196°C/W
Junction-to-Case Thermal Resistance (
qJC) ...............70°C/W
MAX
Junction-to-Ambient Thermal Resistance (
qJA) .....206.3°C/W
Junction-to-Case Thermal Resistance (
qJC) ...............42°C/W
TSSOP
Junction-to-Ambient Thermal Resistance (
qJA) .....100.4°C/W
Junction-to-Case Thermal Resistance (
qJC) ...............30°C/W
SO
Junction-to-Ambient Thermal Resistance (
qJA) ..........84°C/W
Junction-to-Case Thermal Resistance (
qJC) ...............34°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
PACKAGE THERMAL CHARACTERISTICS (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Input Offset Voltage
VOS
0.4
7
mV
Input Voltage Hysteresis
VHYST
MAX9093/MAX9095
2
mV
Input Offset Voltage Average
Temperature Drift
TCVOS
1.5
F
V/NC
Input Bias Current
IB
TA = +25NC
Q
0.0003
Q
250
nA
TA = -40NC to +85NC
±400
TA = -40NC to +125NC
±400
Input Offset Current
IOS
TA = +25NC
Q
0.0003
±50
nA
TA = -40NC to +85NC
±150
TA = -40NC to +125NC
±150
Input Voltage Range
VCM
-0.1
V
2
Voltage Gain
AV
MAX9092/MAX9094
500
V/mV
Output Saturation Voltage
VSAT
ISINK P 1mA
25
mV
Output Sink Current
IOUT
VOUT P 1.5V
5
16
mA
Supply Current
IS
MAX9092/MAX9093 (both comparators)
100
180
F
A
MAX9094/MAX9095 (all four comparators)
220
360
Output Leakage Current
TA = +25NC
0.005
F
A
TA = -40NC to +85NC
1
TA = -40NC to +125NC
2