參數(shù)資料
型號: MAX5926EEE+
廠商: Maxim Integrated
文件頁數(shù): 18/21頁
文件大?。?/td> 333K
描述: IC HOT-SWAP CONTROLLER 16QSOP-EP
產(chǎn)品培訓模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標準包裝: 100
類型: 熱交換控制器
應用: 通用
內部開關:
電源電壓: 1 V ~ 13.2 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-LSSOP(0.154",3.90mm 寬)
供應商設備封裝: 16-QSOP 裸露焊盤
包裝: 管件
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
18   ______________________________________________________________________________________
Optional Sense Resistor
Select the sense resistor in conjunction with R
CB
to set
the slow and fast circuit-breaker thresholds (see the
Selecting a Circuit-Breaker Threshold section). The
sense-resistor power dissipation depends on the device
configuration. If latched mode is selected, P
RSENSE
=
(I
OVERLOAD
)
2
x R
SENSE
; if autoretry is selected, then
P
RSENSE
= (I
OVERLOAD
)
2
x R
SENSE
x (t
ON
/t
RETRY
).
Choose a sense-resistor power rating of twice the
P
RSENSE
for long-term reliable operation. In addition,
ensure that the sense resistor has an adequate I
2
T rating
to survive instantaneous short-circuit conditions.
No-Load Operation
The internal circuitry is capable of sourcing a current at
the OUT terminal of up to 120礎 from a voltage V
IN
+
V
GS
. If there is no load on the circuit, the output capacitor
will charge to a voltage above V
IN
until the external MOS-
FETs body diode conducts to clamp the capacitor volt-
age at VIN plus the body-diode V
F
. When testing or
operating with no load, it is therefore recommended that
the output capacitor be paralleled with a resistor of value:
R = V
X
/ 120礎
where V
X
is the maximum acceptable output voltage
prior to hot-swap completion.
Design Procedure
Given:
" V
CC
= V
S
= 5V
" C
L
= 150礔
" Full-Load Current = 5A
" No R
SENSE
" I
INRUSH
= 500mA
Procedures:
1) Calculate the required slew rate and corresponding
C
SLEW
:
2) Select a MOSFET and determine the worst-case
power dissipation.
3) Minimize power dissipation at full load current and
at high temperature by selecting a MOSFET with an
appropriate R
DS(ON)
. Assume a 20癈 temperature
difference between the MAX5924/MAX5925/
MAX5926 and the MOSFET.
For example, at room temperature the IRF7822s
R
DS(ON)
= 6.5m&. The temperature coefficient for
this device is 4000ppm/癈. The maximum R
DS(ON)
for the MOSFET at T
J(MOSFET)
= +105癈 is:
The power dissipation in the MOSFET at full load is:
4) Select R
CB
.
Since the MOSFETs temperature coefficient is
4000ppm/癈, which is greater than TC
ICB
(3300ppm/癈), calculate the circuit-breaker thresh-
old at high temperature so the circuit breaker is
guaranteed not to trip at lower temperature during
normal operation (Figure 15).
I
TRIPSLOW
= I
FULL LOAD
+ 20% = 5A + 20% = 6A
R
DS(ON)105
= 8.58m& (max), from step 2
I
CB85
= 58礎 x (1 + (3300ppm/癈 x (85 - 25)癈)
= 69.5礎 (min)
R
CB
= ((6A x 8.58m&) + 4.7mV)/69.5礎 = 808&
R
I
x R
V
I
CB
TRIPSLOW
DS ON
CB OS
CB
=
(
)
+
(    )
,
105
85
P    I R
A
m
mW
D
=
=
?/DIV>
& =
2
2
5
8 58
215
(   )        .
R
m
C
C
ppm
C
m
DS ON
(    )
.
    
(
)    
 
.
105
6 5
1   105
25
4000
8 58
=
?/DIV>
+
?nbsp      ?nbsp   ?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
=
&
&
C
SR
F
SLEW
V
ms
=
?/DIV>
=
?/DIV>
=


330    10
330    10
3 3
0 1
9
9
   
   
.
. ?/DIV>
SR
I
C
V
ms
INRUSH
L
=
?/DIV>
=
1000
3 3
   
.
Table 4. Component Manufacturers
COMPONENT
MANUFACTURER
PHONE
WEBSITE
Dale-Vishay
402-564-3131
www.vishay.com
Sense Resistors
IRC
828-264-8861
www.irctt.com
Fairchild
888-522-5372
www.fairchildsemi.com
MOSFETs
International Rectifier
310-233-3331
www.irf.com
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