參數(shù)資料
型號： MAX5520ETC+
廠商： Maxim Integrated Products
文件頁數(shù)： 12/20頁
文件大?。?/td> 0K
描述： IC DAC 10BIT SGL ULP 12-TQFN
產(chǎn)品培訓模塊： Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標準包裝： 75
設置時間： 660µs
位數(shù)： 10
數(shù)據(jù)接口： MICROWIRE?，QSPI?，串行，SPI?
轉換器數(shù)目： 1
電壓電源： 單電源
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 12-WQFN 裸露焊盤
供應商設備封裝： 12-TQFN-EP（4x4）
包裝： 管件
輸出數(shù)目和類型： 1 電壓，單極；1 電壓，雙極
采樣率（每秒）： *
MAX5520/MAX5521
+1.8V to +5.5V, Ultra-Low-Power, 10-Bit,
Voltage-Output DACs
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VDD = +1.8V to +5.5V, OUT unloaded, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDD to GND ..............................................................-0.3V to +6V
OUT to GND ...............................................-0.3V to (VDD + 0.3V)
FB to GND ..................................................-0.3V to (VDD + 0.3V)
SCLK, DIN, CS to GND ..............................-0.3V to (VDD + 0.3V)
REFIN, REFOUT to GND ............................-0.3V to (VDD + 0.3V)
Continuous Power Dissipation (TA = +70°C)
Thin QFN (derate 16.9mW/°C above +70°C).............1349mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ..................................................... +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
STATIC ACCURACY (MAX5520 EXTERNAL REFERENCE)
Resolution
N
10
Bits
VDD = 5V, VREF = 4.096V
±1
±4
Integral Nonlinearity (Note 1)
INL
VDD = 1.8V, VREF = 1.024V
±1
±4
LSB
Guaranteed monotonic,
VDD = 5V, VREF = 4.096V
±0.2
±1
Differential Nonlinearity (Note 1)
DNL
Guaranteed monotonic,
VDD = 1.8V, VREF = 1.024V
±0.2
±1
LSB
VDD = 5V, VREF = 4.096V
±1
±20
Offset Error (Note 2)
VOS
VDD = 1.8V, VREF = 1.024V
±1
±20
mV
Offset-Error Temperature Drift
±2
V/
°C
VDD = 5V, VREF = 4.096V
±1
±2
Gain Error (Note 3)
GE
VDD = 1.8V, VREF = 1.024V
±1
±2
LSB
Gain-Error Temperature
Coefficient
±4
ppm/
°C
Power-Supply Rejection Ratio
PSRR
1.8V
≤ VDD ≤ 5.5V
85
dB
STATIC ACCURACY (MAX5521 INTERNAL REFERENCE)
Resolution
N
10
Bits
VDD = 5V, VREF = 3.9V
±1
±4
Integral Nonlinearity (Note 1)
INL
VDD = 1.8V, VREF = 1.2V
±1
±4
LSB
Guaranteed monotonic,
VDD = 5V, VREF = 3.9V
±0.2
±1
Differential Nonlinearity (Note 1)
DNL
Guaranteed monotonic,
VDD = 1.8V, VREF = 1.2V
±0.2
±1
LSB
VDD = 5V, VREF = 3.9V
±1
±20
Offset Error (Note 2)
VOS
VDD = 1.8V, VREF = 1.2V
±1
±20
mV
Offset-Error Temperature Drift
±2
V/
°C
VDD = 5V, VREF = 3.9V
±1
±2
Gain Error (Note 3)
GE
VDD = 1.8V, VREF = 1.2V
±1
±2
LSB
Gain-Error Temperature
Coefficient
±4
ppm/
°C
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