參數(shù)資料
型號: MAX4921BETD+T
廠商: Maxim Integrated Products
文件頁數(shù): 13/19頁
文件大?。?/td> 0K
描述: IC CTLR OVP/OCP BATT PWR 14-TDFN
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標準包裝: 2,500
類型: 過壓和過流控制器
應(yīng)用: 手機,數(shù)碼相機,媒體播放器
安裝類型: 表面貼裝
封裝/外殼: 14-WFDFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 14-TDFN-EP(3x3)
包裝: 帶卷 (TR)
MAX4919B/MAX4920B/MAX4921B
Battery Power-Up Logic with Overvoltage
and Overcurrent Protection
_______________________________________________________________________________________
3
ELECTRICAL CHARACTERISTICS (continued)
(VIN = 5V (MAX4919B/MAX4920B) or VIN = 4.2V (MAX4921B), VBTI = 4V, TA = -40°C to +85°C, unless otherwise noted. Typical values
are at TA = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
GATE DRIVERS
VGN1 referenced to GND, IGN1 sourcing 1A;
MAX4919B/MAX4920B
910
GN1 Turn-On Voltage
VGN1
VGN1 referenced to GND, IGN1 sourcing 1A;
MAX4921B
7.8
8.4
V
GN1 Pulldown Current
IGPD
VIN > OVLO, VGN1 = 5.5V
30
mA
GP1 Clamp Voltage
VCLAMP
VIN - VGP1 when VIN = 28V
12.5
16.5
19.5
V
GP1 Pulldown Resistor
RGPD
31
51.5
72
k
LOGIC INPUTS (PWR_HOLD, HP_PWR, PWR_ON,
EN)
Input-High Voltage
VIH
VBTI = 5.50V
1.5
V
Input-Low Voltage
VIL
VBTI = 2.3V for PWR_HOLD, HP_PWR and
EN; VBTI = 3V for PWR_ON
0.4
V
PWR_HOLD, EN Input Leakage
Current
ILKG
EN, PWR_HOLD = GND or 5.5V
-1
+1
A
PWR_ON, HP_PWR Pulldown
Resistance
RIPD
200
k
LOGIC OUTPUTS (
ACOK, ONOK)
Output-Low Voltage
VOL
ISINK = 1mA
0.4
V
Output-High Leakage Current
1A
TIMING
IN Debounce Time
tINDBC
Time from UVLO < VIN < OVLO to VGN1 >
0.3V, CGN1 = 500pF
10
25
40
ms
ACOK Blanking Time
tBLNKAC
Time from VGN1 > 0.3V to ACOK low,
CGN1 = 500pF
10
25
40
ms
HP_PWR Debounce Time
tHPDBC
Time for internal pFET to turn on after
VHP_PWR > VIH
10
25
40
ms
ACOK One-Shot Time
t1SHAC
VPWR_HOLD = 0V; time for internal pFET to
turn off after ACOK < VOL (Figure 1)
488
1220
1952
ms
HP_PWR One-Shot Time
t1SHHP
VPWR_HOLD = 0V; time for internal pFET to
turn off after VHP_PWR > VIH (Figure 2)
488
1220
1952
ms
Current-Limit Blanking Time
tCLIM
VBTI = 2.7V; VBTO shorted to GND; time for
internal pFET current to reduce to 10mA
4
1016ms
GN1 Turn-On Time
tGON
VGN1 = 0.3V to 8V
(MAX4919B/MAX4920B),
VGN1 = 0.3V to 7V (MAX4921B),
CGN1 = 500pF
10
ms
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