參數(shù)資料
型號(hào)： MAX4920BETD+T
廠商： Maxim Integrated Products
文件頁(yè)數(shù)： 4/19頁(yè)
文件大?。?/td> 0K
描述： IC CTLR OVP/OCP BATT PWR 14-TDFN
產(chǎn)品培訓(xùn)模塊： Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝： 2,500
類(lèi)型： 過(guò)壓和過(guò)流控制器
應(yīng)用： 手機(jī)，數(shù)碼相機(jī)，媒體播放器
安裝類(lèi)型： 表面貼裝
封裝/外殼： 14-WFDFN 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝： 14-TDFN-EP（3x3）
包裝： 帶卷 (TR)
MAX4919B/MAX4920B/MAX4921B
MOSFET Selection
The MAX4919B/MAX4920B/MAX4921B are designed
for use with a complementary MOSFET or single
p-channel and dual back-to-back n-channel MOSFETS.
In most situations, MOSFETs with RDS(ON) specified for
a VGS of 4.5V will work well. Also, the VDS should be
30V in order for the MOSFET to withstand the full 28V IN
range of the MAX4919B/MAX4920B/MAX4921B. Table
1 shows a selection of MOSFETs which are appropriate
for use.
IN Bypass Considerations
For most applications, bypass IN to GND with a 1F
ceramic capacitor to enable ±15kV ESD protection
(when GP1 is not utilized). If ±15kV is not required,
place a minimum 0.1F capacitor at IN to GND. If the
power source has significant inductance due to long
lead length, take care to prevent overshoots due to the
LC tank circuit and provide protection if necessary to
prevent exceeding the +30V absolute maximum rating
at IN.
BTO Bypass Capacitor Considerations
In order to guarantee a successful startup of the inter-
nal p-channel MOSFET, use a capacitance lower than
CBTO(MAX). If the load capacitance is too large, then
current may not have enough time to charge the
capacitance and the device assumes that there is a
faulty load condition. The maximum capacitive-load
value that can be driven by BTO is obtained by the fol-
lowing formula:
where CBTO is the output capacitor at BTO, VBTI is
the battery voltage, tCLIM is the minimum current-limit
blanking time, and ICLIM is the minimum forward cur-
rent-limit value.
C
It
V
BTO MAX
LIM
CLIM
BTI
() ≤
×
Battery Power-Up Logic with Overvoltage
and Overcurrent Protection
12
______________________________________________________________________________________
PART
CONFIGURATION/
PACKAGE
VGS (MAX)
(V)
VDS (MAX)
(V)
RON at 4.5V
(m
)
MANUFACTURER
30
143
(N-FET)
Si5504DC
Complementary
MOSFET/1206-8
±20
-30
290
(P-FET)
Si5902DC
Dual/1206-8
±20
30
143
(N-FET)
Si1426DH
Single/DFN-6
±20
30
115
(N-FET)
Si5435DC
Single/1206-8
±20
-30
80
(P-FET)
Vishay Siliconix
www.vishay.com
FDC6561AN
Dual/SSOT-6
±20
30
145
(N-FET)
FDG315N
Single/DFN-6
±20
30
160
(N-FET)
FDC658P
Single/SSOT-6
±20
-30
75
(P-FET)
FDC654P
Single/SSOT-6
±20
-30
125
(P-FET)
Fairchild Semiconductor
www.fairchildsemi.com
Table 1. MOSFET Suggestions
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAX4921BETD+ 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述:
MAX4921BETD+T 功能描述:電池管理 Battery Power-Up Logic RoHS:否 制造商:Texas Instruments 電池類(lèi)型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel
MAX4924ELT+T 功能描述:開(kāi)關(guān)變換器、穩(wěn)壓器與控制器 Overvoltage Protector RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開(kāi)關(guān)頻率:1 MHz 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel
MAX4925ELT+ 制造商:Maxim Integrated Products 功能描述:OVP PROTECTOR WITH EXTERNAL PFET - Bulk
MAX4925ELT+T 功能描述:開(kāi)關(guān)變換器、穩(wěn)壓器與控制器 Overvoltage Protector RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開(kāi)關(guān)頻率:1 MHz 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel
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