
M
0.4
, Low-Voltage, Single-Supply
SPST Analog Switches in SC70
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to GND
V+, IN .......................................................................-0.3V to +4V
COM, NO, NC (Note 1).................................-0.3V to (V+ + 0.3V)
Continuous Current NO, NC to COM .............................±300mA
Peak Switch Current NO, NC to COM
(pulsed at 1ms, 10% duty cycle max)....................... ±600mA
Continuous Power Dissipation (T
A
= +70°C)
5-Pin SC70 (derate 3.1mW/°C above +70°C)..............247mW
ELECTRICAL CHARACTERISTICS—Single +3V Supply
(V+ = +2.7V to +3.6V, V
IH
= +1.4V, V
IL
= +0.5V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V+ = +3.0V and
T
A
= +25°C.) (Notes 2, 3)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Operating Temperature Range
MAX471_EXK...................................................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s)................................ +300°C
Note 1:
Signals on NO, NC, or COM exceeding V+ or GND are clamped by internal diodes.
PARAMETER
SYMBOL
CONDITIONS
TA
MIN
TYP
MAX
UNITS
ANALOG SWITCH
Analog Signal Range
V
COM
,
V
NO
, V
NC
0
V+
V
+25
°
C
T
M N
to T
M AX
+25
°
C
T
M N
to T
M AX
+25
°
C
T
M N
to T
M AX
+25
°
C
T
M N
to T
M AX
+25
°
C
T
M N
to T
M AX
0.3
0.4
0.45
0.09
0.1
1
10
1
10
2
10
On-Resistance (Note 6)
R
ON
V+ = 2.7V, I
COM
= 100mA,
V
NO
or V
NC
= 1.5V
0.05
On-Resistance Flatness (Note 4)
R
F LA T( ON
V+ = 2.7V, I
COM
= 100mA,
V
NO
or V
NC
= 0.6, 1.5V, 2.1V
-1
-10
-1
-10
-2
-10
0.01
NO, NC Off-Leakage Current
I
N O( OFF)
or
I
N C OFF)
or
V+ = 3.3V, V
COM
= 0.3V, 3V
V
NO
or V
NC
= 3V, 0.3V
nA
0.01
COM Off-Leakage Current
I
C OM OFF)
V+ = 3.3V, V
COM
= 0.3V, 3V
V
NO
or V
NC
= 3V, 0.3V
nA
COM On-Leakage Current
I
COM(ON)
V+ = 3.3V, V
COM
= 0.3V, 3V, V
NO
or
V
N C
= 0.3V 3V or fl oati ng
nA
DYNAMIC
+25
°
C
T
M N
to T
M AX
+25
°
C
T
M N
to T
M AX
12
18
20
12
15
Turn-On Time
t
ON
V
N O
or V
N C
= 1.5V, R
L
= 50
,
C
L
= 35p F, Fig ur e 1
ns
6
Turn-Off Time
t
OFF
V
N O
or V
N C
= 1.5V, R
L
= 50
,
C
L
= 35p F, Fig ur e 1
ns
Charge Injection
Q
V
GEN
= 0, R
GEN
= 0,
C
L
= 1.0nF, Figure 2
+25
°
C
20
pC
Off-Isolation (Note 5)
V
ISO
f = 1M Hz, V
C OM
= 1V
RM S
,
R
L
= 50
, C
L
= 5p F, Fi gur e 3
+25
°
C
-54
dB
Total Harmonic Distortion
THD
f = 20Hz to 20kHz,
V
COM
= 2V
P-P
, R
L
= 32
+25
°
C
0.01
%
NC or NO Off-Capacitance
C
N O( OFF)
C
N C OFF)
C
C OM( OFF)
f = 1MHz, Figure 4
C
C OM( ON
f = 1MHz, Figure 4
f = 1MHz, Figure 4
+25
°
C
55
pF
COM Off-Capacitance
COM On-Capacitance
+25
°
C
+25
°
C
55
80
pF
pF