
MAX4695
Low-Voltage, 60
Dual
SPDT Analog Switch in Thin QFN
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS—Single +3V Supply
(V+ = +2.7V to +3.3V, VIH = +1.4V, VIL = +0.5V, TA = -40°C to +85°C, unless otherwise noted. Typical values are at V+ = +3V and
TA = +25°C.) (Notes 2, 9)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Signals on IN_, COM_, NO_, and NC_ exceeding V+ or GND are clamped by internal diodes. Limit forward-diode current to
maximum current rating.
(Voltages Referenced to GND)
V+ ............................................................................-0.3V to +6V
All Other Pins (Note 1) .............................. -0.3V to (V+ + 0.3V)
Continuous Current COM_, NO_, NC_ .............................±20mA
Peak Current COM_, NO_, NC_
(pulsed at 1ms, 10% duty cycle) ...............................±40mA
ESD per Method 3015.7 .........................................................2kV
Continuous Power Dissipation (TA = +70°C)
10-Pin MAX (derate 4.7mW/°C above +70°C) ......... 330mW
12-Pin Thin QFN (derate 16.7mW/°C above +70°C) 1333.3mW
Operating Temperature Range .......................... -40°C to +85°C
Storage Temperature Range ........................... -65°C to +150°C
Lead Temperature (soldering, 10s) ............................... +300°C
PARAMETER
SYMBOL
CONDITIONS
TA
MIN
TYP
MAX
UNITS
ANALOG SWITCH
Analog Signal Range
VCOM_,
VNO_, VNC_
_
0V+
V
+25
°C40
60
On-Resistance
RON
V+ = +2.7V, ICOM_ = 1mA, VNO_ or
VNC_ = +1.4V
TMIN to TMAX
70
+25
°C
0.5
3
On-Resistance Match
Between Channels (Note 3)
RON
V+ = +2.7V, ICOM_ = 1mA, VNO_ or
VNC_ = +1.4V
TMIN to TMAX
4
+25
°C6
10
On-Resistance Flatness
(Note 4)
RFLAT (ON)
V+ = +2.7V, ICOM_ = 1mA, VNO_ or
VNC_ = +1V, +1.4V, +1.8V
TMIN to TMAX
15
+25
°C
-0.1
±0.01
+0.1
NO_, NC_ Off-Leakage
Current (Note 5)
INO_(OFF),
INC_(OFF)
V+ = +3.3V, VCOM_ = +0.3V, +3V
VNO_ or VNC_ = +3V, +0.3V
TMIN to TMAX
-1
+1
nA
+25
°C
-0.2
±0.01
+0.2
COM_ On-Leakage Current
(Note 5)
ICOM _(ON)
V+ = +3.3V, VCOM_ = +0.3V, +3V
VNO_ or VNC_ = +0.3V, +3V, or floating
TMIN to TMAX
+2
nA
DYNAMIC
+25
°C24
30
Turn-On Time
tON
VNO or VNC_ = +1.5V, RL = 300
,
CL = 35pF, Figure 2
TMIN to TMAX
40
ns
+25
°C12
18
Turn-Off Time
tOFF
VNO or VNC_ = +1.5V, RL = 300
,
CL = 35pF, Figure 2
TMIN to TMAX
20
ns
+25
°C12
Break-Before-Make Time
(Note 6)
tBBM
VNO or VNC_ = +1.5V, RL = 300
,
CL = 35pF, Figure 3
TMIN to TMAX
2
ns
Charge Injection
Q
VGEN = 0, RGEN = 0, CL = 1.0nF,
Figure 4
4pC
On-Channel -3dB Bandwidth
BW
Signal = 0dBm, 50
in and out,
Figure 5
300
MHz
Off-Isolation (Note 7)
VISO
f = 1MHz, RL = 50
, CL = 5pF,
Figure 5
-75
dB