參數(shù)資料
型號: MAX1224ETC+T
廠商: Maxim Integrated Products
文件頁數(shù): 11/18頁
文件大?。?/td> 0K
描述: IC ADC 12BIT 1.5MSPS 12-TQFN
產(chǎn)品培訓模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標準包裝: 2,500
位數(shù): 12
采樣率(每秒): 1.5M
數(shù)據(jù)接口: MICROWIRE?,QSPI?,串行,SPI?
轉(zhuǎn)換器數(shù)目: 1
功率耗散(最大): 18mW
電壓電源: 單電源
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 12-WQFN 裸露焊盤
供應商設備封裝: 12-TQFN-EP(4x4)
包裝: 帶卷 (TR)
輸入數(shù)目和類型: 1 個差分,單極
MAX1224/MAX1225
1.5Msps, Single-Supply, Low-Power,
True-Differential, 12-Bit ADCs
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VDD = +2.7V to +3.6V, VL = VDD, VREF = 2.048V, fSCLK = 24.0MHz, 50% duty cycle, TA = -40°C to +85°C, unless otherwise noted.
Typical values are at VDD = 3V and TA = +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDD to GND ..............................................................-0.3V to +6V
VL to GND ................-0.3V to the lower of (VDD + 0.3V) and +6V
Digital Inputs
to GND .................-0.3V to the lower of (VDD + 0.3V) and +6V
Digital Output
to GND ....................-0.3V to the lower of (VL + 0.3V) and +6V
Analog Inputs and
REF to GND..........-0.3V to the lower of (VDD + 0.3V) and +6V
RGND to GND .......................................................-0.3V to +0.3V
Maximum Current into Any Pin............................................50mA
Continuous Power Dissipation (TA = +70°C)
12-Pin TQFN (derate 16.9mW/°C above +70°C) ......1349mW
Operating Temperature Range
MAX122_ ETC.................................................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC ACCURACY
Resolution
12
Bits
Relative Accuracy
INL
(Note 1)
-1.5
+1.5
LSB
Differential Nonlinearity
DNL
Guaranteed no missing codes (Note 2)
-1.0
+1.5
LSB
Offset Error
±8.0
LSB
Offset-Error Temperature
Coefficient
±1
ppm/°C
Gain Error
Offset nulled
±6.0
LSB
Gain Temperature Coefficient
±2
ppm/°C
DYNAMIC SPECIFICATIONS (fIN = 525kHz sine wave, VIN = VREF, unless otherwise noted.)
Signal-to-Noise Plus Distortion
SINAD
66
69
dB
Total Harmonic Distortion
THD
Up to the 5th harmonic
-80
-76
dB
Spurious-Free Dynamic Range
SFDR
-83
-76
dB
Intermodulation Distortion
IMD
fIN1 = 250kHz, fIN2 = 300kHz
-78
dB
Full-Power Bandwidth
-3dB point
15
MHz
Full-Linear Bandwidth
S/(N + D) > 68dB, single ended
1.2
MHz
CONVERSION RATE
Minimum Conversion Time
tCONV
(Note 3)
0.667
μs
Maximum Throughput Rate
1.5
Msps
Minimum Throughput Rate
(Note 4)
10
ksps
Track-and-Hold Acquisition Time
tACQ
(Note 5)
125
ns
Aperture Delay
5
ns
Aperture Jitter
(Note 6)
30
ps
External Clock Frequency
fSCLK
(Note 7)
24.0
MHz
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