Low-Power, 4-/8-/12-Channel, I2C, 10-Bit ADCs in Ultra-Small P" />
參數(shù)資料
型號: MAX11608EEE+T
廠商: Maxim Integrated Products
文件頁數(shù): 12/22頁
文件大小: 0K
描述: IC ADC SERIAL 10BIT 8CH 16-QSOP
產品培訓模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標準包裝: 2,500
位數(shù): 10
采樣率(每秒): 94.4k
數(shù)據(jù)接口: I²C,串行
轉換器數(shù)目: 1
功率耗散(最大): 666.7mW
電壓電源: 單電源
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-SSOP(0.154",3.90mm 寬)
供應商設備封裝: 16-QSOP
包裝: 帶卷 (TR)
輸入數(shù)目和類型: 8 個單端,單極;8 個單端,雙極;4 個差分,單極;4 個差分,雙極
MAX11606–MAX11611
Low-Power, 4-/8-/12-Channel, I2C,
10-Bit ADCs in Ultra-Small Packages
2
Maxim Integrated
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VDD = 2.7V to 3.6V (MAX11607/MAX11609/MAX11611), VDD = 4.5V to 5.5V (MAX11606/MAX11608/MAX11610), VREF = 2.048V
(MAX11607/MAX11609/MAX11611), VREF = 4.096V (MAX11606/MAX11608/MAX11610), fSCL = 1.7MHz, TA = TMIN to TMAX, unless other-
wise noted. Typical values are at TA = +25°C. See Tables 1–5 for programming notation.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDD to GND ..............................................................-0.3V to +6V
AIN0–AIN11,
REF to GND ............-0.3V to the lower of (VDD + 0.3V) and 6V
SDA, SCL to GND.....................................................-0.3V to +6V
Maximum Current into Any Pin .........................................±50mA
Continuous Power Dissipation (TA = +70°C)
8-Pin MAX (derate 5.9mW/°C above +70°C) ..........470.6mW
12-Pin WLP (derate 16.1mW/°C above +70°C) .........1288mW
16-Pin QSOP (derate 8.3mW/°C above +70°C)........666.7mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC ACCURACY (Note 2)
Resolution
10
Bits
Relative Accuracy
INL
(Note 3)
±1
LSB
Differential Nonlinearity
DNL
No missing codes over temperature
±1
LSB
Offset Error
±1
LSB
Offset-Error Temperature
Coefficient
Relative to FSR
0.3
ppm/
°C
Gain Error
(Note 4)
±1
LSB
Gain-Temperature Coefficient
Relative to FSR
0.3
ppm/
°C
Channel-to-Channel Offset
Matching
±0.1
LSB
Channel-to-Channel Gain
Matching
±0.1
LSB
DYNAMIC PERFORMANCE (fIN(SINE-WAVE) = 10kHz, VIN(P-P) = VREF, fSAMPLE = 94.4ksps)
Signal-to-Noise Plus Distortion
SINAD
60
dB
Total Harmonic Distortion
THD
Up to the 5th harmonic
-70
dB
Spurious Free Dynamic Range
SFDR
70
dB
Full-Power Bandwidth
SINAD > 57dB
3.0
MHz
Full-Linear Bandwidth
-3dB point
5.0
MHz
CONVERSION RATE
Internal clock
6.8
Conversion Time (Note 5)
tCONV
External clock
10.6
s
Internal clock, SCAN[1:0] = 01
53
Internal clock, SCAN[1:0] = 00
CS[3:0] = 1011 (MAX11610/MAX11611)
53
Throughput Rate
fSAMPLE
External clock
94.4
ksps
Track/Hold Acquisition Time
800
ns
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