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參數資料
| 型號： | MAV-11BSM |
| 廠商： | MINI-CIRCUITS |
| 元件分類： | 衰減器 |
| 英文描述： | Monolithic Amplifier |
| 中文描述： | 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | CASE RRR137, 4 PIN |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 52K |
| 代理商： | MAV-11BSM |
INTERNET
http://www.minicircuits.com
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11235-0003
(718)
934-4500
Fax
(718)
332-4661
Distribution Centers
NO
RTH
AMERICA
800-654-7949
417-335-5935
Fax
417-335-5945
E
U
R
OP
E
44-1252-832600
Fax
44-1252-837010
Mini-Circuits
I
SO 9001 C
ERTI
F
IE
D
MAV-11BSM
REV. OR
M87880
ED-11227
MAV-11BSM
YB/TD/CP
030702
Features
equivalent to Agilent MSA-1105 and
Mini-Circuit's MAV-11SM
high IP3, 34 dBm
excellent VSWR, 1.2:1 typ.
medium gain
output power, 18 dBm
50
,
50 to 1000 MHz
Electrical Specifications @25°C
FREQ.
(MHz)
Pin Configuration
RF IN
RF OUT
DC
GND EXT.
1
3
3
2,4
CASE STYLE: RRR137
f
L
- f
U
DC POWER
@ Pin 3
VSWR
(:1)
Typ.
DYNAMIC
RANGE
NF
dB
Typ.
IP3
dBm
Typ.
MAXIMUM
POWER, dBm
Output
(1 dB
Comp.)
Typ.
Input
(no
dmg.)
1000
100
GAIN, dB
Typical @MHz
2000
MAXIMUM
RATING**
Out
In
Current
(mA)
Device
Volt
Typ. Min. Max.
I
(mA)
P
(mW)
Min.*
Applications
cellular
VHF/UHF receivers/transmitters
*
** Permanent damage may occur if any of these limits are exceeded
*** Thermal resistance
θ
jc is from hottest junction in the device to the mounting surface of the leads.
Maximum Ratings
Operating Temperature
-40°C to 85°C
Storage Temperature
-55°C to 100°C
Minimum gain at highest frequency. Full temperature range.
MODEL
NO.
PRICE
$
Qty.
(30)
THERMAL
RESIS-
TANCE***
θ
jc,
typ.
°C/W
Monolithic Amplifier
Surface Mount
model identification
Model
MAV-11BSM
marking
11
Outline Drawing
Outline Dimensions ( )
A
B
C
.28
.14
.030
7.11
3.56
0.76
inch
mm
F
.110
2.79
MAV-11BSM
50-1000
12.7 12.1 11.3 9.5
±0.7
9.5
+18.0
+13
4.4
34
1.2
1.2
80
460
60
5.5
4.9
6.0
141
1.50
NEW!
Flatness
typical biasing configuration (MAV)
Resistor Values
Vcc
7
8
9
10
11
12
13
14
15
"1%"
28.0
45.3
61.9
78.7
95.3
113
127
143
158
500
D
E
G
H
J
wt.
.020
0.51
.145
3.68
.006
0.15
.010
0.25
.030
0.76
grams
.015
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