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| 型號： | MAT04FSZ-REEL |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SO-14 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 853K |
| 代理商： | MAT04FSZ-REEL |
ELECTRICAL CHARACTERISTICS (@ T
A = 25 C unless otherwise noted. Each transistor is individually tested. For matching
parameters (VOS, IOS,
hFE) each dual transistor combination is verified to meet stated limits. All tests made at endpoints unless otherwise noted.)
MAT04E
MAT04F
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
Current Gain
hFE
10
A ≤ IC ≤ 1 mA
0 V
≤ V
CB
≤ 30 V1
400
800
300
600
Current Gain Match
hFE
IC = 100
A
0 V
≤ VCB ≤ 30 V2
0.5
2
1
4
%
Offset Voltage
VOS
10
A ≤ I
C
≤ 1 mA
0 V
≤ VCB ≤ 30 V3
50
200
100
400
V
Offset Voltage Change vs.
VOS/IC
10
A ≤ IC ≤ 1 mA
Collector Current
VCB = 0 V
3
525
10
50
V
Offset Voltage Change vs. VCB
VOS/VCB 10 A ≤ IC ≤ 1 mA
0 V
≤ VCB ≤ 30 V3
50
100
200
V
Bulk Emitter Resistance
rBE
10
A ≤ I
C
≤ 1 mA
VCB = 0 V
4
0.4
0.6
0.4
0.6
Input Bias Current
IB
IC = 100
A
0 V
≤ V
CB
≤ 30 V
125
250
165
330
nA
Input Offset Current
IOS
IC = 100
A; VCB = 0 V
0.6
5
2
13
nA
Breakdown Voltage
BVCEO
IC = 10
A40
40
V
Collector Saturation Voltage
VCE(SAT)
IB = 100
A; I
C = 1 mA
0.03
0.06
0.03
0.06
V
Collector-Base Leakage Current
ICBO
VCB = 40 V
5
pA
Noise Voltage Density
en
VCB = 0 V; fO = 10 Hz
2
3
2
4
nV/
√Hz
IC = 1 mA; fO = 100 Hz
1.8
2.5
1.8
3
nV/
√Hz
fO = 1 kHz
5
1.8
2.5
1.8
3
nV/
√Hz
Gain Bandwidth Product
fT
IC = 1 mA; VCE = 10 V
300
MHz
Output Capacitance
COBO
VCB = 15 V; IE = 0
f = 1 MHz
10
pF
Input Capacitance
CEBO
VBE = 0 V; IC = 0
f = 1 MHz
40
pF
NOTES
1Current gain measured at I
C = 10
A, 100 A and 1 mA.
2Current gain match is defined as:
h
Ih
I
FE
BFE
MIN
C
=
100(
)(
)
3Measured at I
C = 10
A and guaranteed by design over the specified range of I
C.
4Guaranteed by design.
5Sample tested.
Specifications subject to change without notice.
–2–
REV. D
MAT04–SPECIFICATIONS
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