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參數(shù)資料
| 型號(hào)： | MAT03GBC |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 封裝： | METAL CAN-6 |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大小： | 259K |
| 代理商： | MAT03GBC |
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MAT03
–3–
REV. B
MAT03N
Parameter
Symbol
Conditions
Limits
Units
Breakdown Voltage
BVCEO
36
V min
Offset Voltage
VOS
IC = 100
A, V
CB = 0 V
200
V max
10
A ≤ I
C
≤ 1 mA
200
V max
Current Gain
hFE
IC = 1 mA, VCB = 0 V, –36 V
80
min
IC = 10
A, V
CB = 0 V, –36 V
60
min
Current Gain Match
h
FE
IC = 100
A, V
CB = 0 V
6
% max
Offset Voltage Change vs. VCB
V
OS/VCB
VCB1 = 0 V, IC = 100 A
200
V max
VCB2 = –36 V
200
V max
Offset Voltage Change
V
OS/
I
C
VCB = 0
75
V max
vs. Collector Current
IC1 = 10 A, IC2 = 1 mA
75
V max
Bulk Resistance
rBE
10
A ≤ I
C
≤ 1 mA
0.75
max
Collector Saturation Voltage
VCE (SAT)
IC = 1 mA, IB = 100
A
0.1
V max
NOTE:
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
WAFER TEST LIMITS (at 25 C, unless otherwise noted.)
DICE CHARACTERISTICS
SUBSTRATE CAN BE
CONNECTED TO V– OR
FLOATED
1. COLLECTOR (1 )
2. BASE (1 )
3. EMITTER (1 )
4. COLLECTOR (2)
5. BASE (2)
6. EMITTER (2 )
ABSOLUTE MAXIMUM RATINGS
1
Collector-Base Voltage (BVCBO) . . . . . . . . . . . . . . . . . . . . 36 V
Collector-Emitter Voltage (BVCEO) . . . . . . . . . . . . . . . . . . 36 V
Collector-Collector Voltage (BVCC) . . . . . . . . . . . . . . . . . . 36 V
Emitter-Emitter Voltage (BVEE) . . . . . . . . . . . . . . . . . . . . . 36 V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Total Power Dissipation
Ambient Temperature
≤ 70°C2 . . . . . . . . . . . . . . . .500 mW
Operating Temperature Range
MAT03A . . . . . . . . . . . . . . . . . . . . . . . . . . –55
°C to +125°C
MAT03E/F . . . . . . . . . . . . . . . . . . . . . . . . . –40
°C to +85°C
Operating Junction Temperature . . . . . . . . . . –55
°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300
°C
Junction Temperature . . . . . . . . . . . . . . . . . . –65
°C to +150°C
NOTES
1Absolute maximum ratings apply to both DICE and packaged devices.
2Rating applies to TO-78 not using a heat sink, and LCC; devices in free air only. For
TO-78, derate linearly at 6.3 mW/
°C above 70°C ambient temperature; for LCC,
derate at 7.8 mW/
°C.
ORDERING GUIDE
1
VOS max
Temperature
Package
Model
(TA = +25 C) Range
Option
MAT03AH
2
100
V
–55
°C to +125°C
TO-78
MAT03EH
100
V
–40
°C to +85°C
TO-78
MAT03FH
200
V
–40
°C to +85°C
TO-78
NOTES
1Burn-in is available on industrial temperature range parts.
2For devices processed in total compliance to MIL-STD-883, add/883 after part
number. Consult factory for 883 data sheet.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT03 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
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