參數(shù)資料
型號(hào): MAT03AH
廠商: ANALOG DEVICES INC
元件分類: 小信號(hào)晶體管
英文描述: Low Noise, Matched Dual PNP Transistor
中文描述: 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78
封裝: METAL CAN-6
文件頁數(shù): 2/12頁
文件大小: 254K
代理商: MAT03AH
MAT 03A
Min
T yp
MAT 03E
MAT 03F
Min
Parameter
Symbol
Conditions
Max Min
T yp
Max
T y
p
Max
Units
Current Gain
1
h
FE
V
CB
= 0 V, –36 V
I
C
= 1 mA
I
C
= 100
μ
A
I
= 10
μ
A
I
C
= 100
μ
A,V
= 0 V
V
CB
= 0 V, I
C
= 100
μ
A
100
90
80
165
150
120
0.5
40
100
90
80
165
150
120
0.5
40
80
70
60
165
150
120
0.5
40
Current Gain Matching
2
Offset Voltage
3
Offset Voltage Change
vs. Collector Voltage
Dh
FE
V
OS
DV
OS
/DV
CB
I
= 100
μ
A
3
100
3
100
6
200
%
μ
V
V
CB1
= 0 V
V
CB2
= –36 V
V
CB
= 0 V
I
C1
= 10
μ
A, I
C2
= 1 mA
V
CB
= 0 V
10
μ
A
I
C
1 mA
I
C
= 100
μ
A, V
CB
= 0 V
11
11
12
12
0.3
0.3
6
150
150
50
50
0.75
0.75
35
11
11
12
12
0.3
0.3
6
150
150
50
50
0.75
0.75
35
11
11
12
12
0.3
0.3
6
200
200
75
75
0.75
0.75
45
μ
V
μ
V
μ
V
μ
V
nA
Offset Voltage Change
vs. Collector Current
Bulk Resistance
DV
OS
/DI
C
r
BE
Offset Current
Collector-Base
Leakage Current
Noise Voltage Density
4
I
OS
I
CB0
e
N
V
CB
= –36 V = V
I
C
= 1 mA, V
CB
= 0
f
O
= 10 Hz
f
O
= 100 Hz
f
O
= 1 kHz
f
O
= 10 kHz
50
200
50
200
50
400
pA
0.8
0.7
0.7
0.7
2
1
1
1
0.8
0.7
0.7
0.7
0.8
0.7
0.7
0.7
nV/
÷
Hz
nV/
÷
Hz
nV/
÷
Hz
nV/
÷
Hz
Collector Saturation
Voltage
V
CE(SAT )
I
C
= 1 mA, I
B
= 100
μ
A
0.025 0.1
0.025 0.1
0.025 0.1
V
–2–
REV. B
NOT ES
1
Current gain is measured at collector-base voltages (V
CB
) swept from 0 to V
MAX
at indicated collector current. T ypicals are measured at V
CB
= 0 V.
100 (
I
B
)
h
FE
(min)
I
C
3
Offset voltage is defined as: V
OS
= V
BE1
– V
BE2
, where V
OS
is the differential voltage for I
C1
= I
C2
: V
OS
= V
BE1
– V
BE2
=
4
Sample tested. Noise tested and specified as equivalent input voltage for each transistor.
5
Guaranteed by V
OS
test
(TCV
OS
=
V
OS
/T
for
V
OS
!
V
BE
)
where T
= 2
98
°
K
for T
A
= 25
°
C.
Specifications subject to change without notice.
2
Current gain matching (
h
FE
) is defined as:
h
FE =
.
KT
q
In
I
C
1
I
C
2
.
MAT03–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ T
A
= +25
8
C, unless otherwse noted.)
ELECTRICAL CHARACTERISTICS
MAT 03A
T yp
Parameter
Symbol
Conditions
Min
Max
Units
Current Gain
h
FE
V
CB
= 0 V, –36 V
I
C
= 1 mA
I
C
= 100
μ
A
I
= 10
μ
A
I
C
= 100
μ
A, V
CB
= 0 V
I
C
= 100
μ
A, V
CB
= 0 V
I
C
= 100
μ
A, V
CB
= 0 V
70
60
50
110
100
85
40
0.3
15
54
Offset Voltage
Offset Voltage Drift
5
Offset Current
Breakdown Voltage
V
T CV
OS
I
BV
CEO
150
0.5
85
μ
V
μ
V/
°
C
nA
V
36
(at –55
8
C
T
A
+125
8
C, unless otherwse noted.)
ELECTRICAL CHARACTERISTICS
MAT 03E
T yp
MAT 03F
T yp
Parameter
Symbol
Conditions
Min
Max
Min
Max
Units
Current Gain
h
FE
V
CB
= 0 V, –36 V
I
C
= 1 mA
I
C
= 100
μ
A
I
C
= 10
μ
A
I
C
= 100
μ
A, V
CB
= 0 V
I
C
= 100
μ
A, V
CB
= 0 V
I
C
= 100
μ
A, V
CB
= 0 V
70
60
50
120
105
90
30
0.3
10
60
50
40
120
105
90
30
0.3
10
Offset Voltage
Offset Voltage Drift
5
Offset Current
Breakdown Voltage
V
OS
T CV
OS
I
OS
BV
CEO
135
0.5
85
265
1.0
200
μ
V
μ
V/
°
C
nA
V
36
36
(at –40
8
C
T
A
+85
8
C, unless otherwse noted.)
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