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參數(shù)資料
| 型號： | MAT03AH/883C |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 封裝： | METAL CAN-6 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大小： | 254K |
| 代理商： | MAT03AH/883C |
–8–
REV. B
MAT03
This amplifier exhibits excellent full power ac performance,
0.08% THD into a 600
load, making it suitable for exacting
audio applications (see Figure 14b).
Figure 14b. Super Low Noise Amplifier—Total
Harmonic Distortion
LOW NOISE MICROPHONE PREAMPLIFIER
Figure 15 shows a microphone preamplifier that consists of a
MAT03 and a low noise op amp. The input stage operates at a
relatively high quiescent current of 2 mA per side, which reduces
the MAT03 transistor’s voltage noise. The 1/ corner is less than
1 Hz. Total harmonic distortion is under 0.005% for a 10 V p-p
signal from 20 Hz to 20 kHz. The preamp gain is 100, but can be
modified by varying R5 or R6 (VOUT/VIN = R5/R6 + 1).
A total input stage emitter current of 4 mA is provided by Q2.
The constant current in Q2 is set by using the forward voltage of
a GaAsP LED as a reference. The difference between this voltage
and the VBE of a silicon transistor is predictable and constant (to
a few percent) over a wide temperature range. The voltage differ-
ence, approximately 1 V, is dropped across the 250
resistor
which produces a temperature stabilized emitter current.
CURRENT SOURCES
A fundamental requirement for accurate current mirrors and ac-
tive load stages is matched transistor components. Due to the
excellent VBE matching (the voltage difference between VBE’s
required to equalize collector current) and gain matching, the
MAT03 can be used to implement a variety of standard current
mirrors that can source current into a load such as an amplifier
stage. The advantages of current loads in amplifiers versus resis-
tors is an increase of voltage gain due to higher impedances,
larger signal range, and in many applications a wider signal
bandwidth.
Figure 16 illustrates a cascode current mirror consisting of two
MAT03 transistor pairs.
The cascode current source has a common base transistor in se-
ries with the output which causes an increase in output imped-
ance of the current source since VCE stays relatively constant.
High frequency characteristics are improved due to a reduction
of Miller capacitance. The small-signal output impedance can
be determined by consulting “hOF vs. Collector Current” typical
graph. Typical output impedance levels approach the perfor-
mance of a perfect current source.
Considering a typical collector current of 100
A, we have:
roQ3 =
1
1.0
MHOS = 1 M
Figure 15. Low Noise Microphone Preamplifier
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PDF描述 |
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| MAT-03AH | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT03AH/883 | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-04NBC | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT-04NBCG | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT-04NACG | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MAT03ARC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT03EH | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:否 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MAT03EHZ | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MAT03FH | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:否 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MAT03FH | 制造商:Analog Devices 功能描述:SEMICONDUCTORSLINEAR |
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