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參數(shù)資料
| 型號： | MAT02FHZ |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 封裝： | METAL CAN-6 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 260K |
| 代理商： | MAT02FHZ |
OBSOLETE
MAT02
–6–
REV. E
Figure 1. Log Conformance Test Circuit
LOG CONFORMANCE TESTING
The log conformance of the MAT02 is tested using the circuit
shown above. The circuit employs a dual transdiode logarithmic
converter operating at a fixed ratio of collector currents that are
swept over a 10:1 range. The output of each transdiode converter
is the VBE of the transistor plus an error term which is the prod-
uct of the collector current and rBE, the bulk emitter resistance.
The difference of the VBE is amplified at a gain of
×100 by the
AMP01 instrumentation amplifier. The differential emitter-base
voltage (
VBE) consists of a temperature-dependent dc level plus
an ac error voltage, which is the deviation from true log confor-
mity as the collector currents vary.
The output of the transdiode logarithmic converter comes from
the idealized intrinsic transistor equation (for silicon):
V
kT
q
In
I
BE
C
S
=
(1)
where
k = Boltzmann’s Constant (1.38062
× 10–23 J/K)
q = Unit Electron Charge (1.60219
× 10–19 °C)
T = Absolute Temperature, K (=
°C + 273.2)
IS = Extrapolated Current for VBE
→0
IC = Collector Current
An error term must be added to this equation to allow for the
bulk resistance (rBE) of the transistor. Error due to the op amp
input current is limited by use of the OP15 BiFET-input op
amp. The resulting AMP01 input is:
V
BE =
kT
q
In
IC1
IC2
+ IC1 rBE1 – IC2 rBE2
(2)
A ramp function that sweeps from 1 V to 10 V is converted by
the op amps to a collector current ramp through each transistor.
Because IC1 is made equal to 10 IC2, and assuming TA = 25
°C,
the previous equation becomes:
V
BE = 59 mV + 0.9 IC1 rBE (
r
BE ~ 0)
As viewed on an oscilloscope, the change in
V
BE for a 10:1
change in IC is then displayed as shown in Figure 2 below:
Figure 2.
With the oscilloscope ac coupled, the temperature dependent
term becomes a dc offset and the trace represents the deviation
from true log conformity. The bulk resistance can be calculated
from the voltage deviation
V
O and the change in collector
current (9 mA):
rBE =
V
O
9 mA
×
1
100
(3)
This procedure finds rBE for Side A. Switching R1 and R2 will
provide the rBE for Side B. Differential rBE is found by making
R1 = R2.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MAT02NBC | 制造商:Analog Devices 功能描述: |
| MAT03 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Low Noise, Matched Dual PNP Transistor |
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