- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98008 > MAT-02EH (ANALOG DEVICES INC) 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 PDF資料下載
參數(shù)資料
| 型號(hào)： | MAT-02EH |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 封裝： | METAL CAN-6 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 260K |
| 代理商： | MAT-02EH |
OBSOLETE
ELECTRICAL CHARACTERISTICS
MAT02E
MAT02F
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
Offset Voltage
VOS
VCB = 0
70
220
V
1
A ≤ I
C
≤ 1 mA1
Average Offset
Voltage Drift
TCVOS
10
A ≤ IC ≤ 1 mA, 0 ≤ VCB ≤ VMAX2
0.08 0.3
0.08 1
V/°C
VOS Trimmed to Zero
3
0.03 0.1
0.03 0.3
Input Offset Current
IOS
IC = 10
A8
13
nA
Input Offset
Current Drift
TCIOS
IC = 10
A4
40
90
40
150
pA/
°C
Input Bias Current
IB
IC = 10
A45
50
nA
Current Gain
hFE
IC = 1 mA
5
325
300
IC = 100
A
275
250
IC = 10
A
225
200
IC = 1
A
200
150
Collector-Base
ICBO
VCB = VMAX
23
nA
Leakage Current
Collector-Emitter
ICES
VCE = VMAX, VBE = 0
3
4
nA
Leakage Current
Collector-Collector
ICC
VCC = VMAX
34
nA
Leakage Current
NOTES
1Measured at I
C = 10
A and guaranteed by design over the specified range of IC.
2Guaranteed by V
OS test (TCVOS
V
T
OS
for VOS
VBE) T = 298K for TA = 25
°C.
3The initial zero offset voltage is established by adjusting the ratio of I
C1 to IC2 at TA = 25
°C. This ratio must be held to 0.003% over the entire temperature range.
Measurements are taken at the temperature extremes and 25
°C.
4Guaranteed by design.
5Current gain is guaranteed with Collector-Base Voltage (V
CB) swept from 0 V to VMAX at the indicated collector current.
Specifications subject to change without notice.
(VCB = 15 V, –25 C
≤ TA ≤ +85 C, unless otherwise noted.)
MAT02
–3–
REV. E
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT02 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Collector-Base Voltage (BVCBO) . . . . . . . . . . . . . . . . . . . . 40 V
Collector-Emitter Voltage (BVCEO) . . . . . . . . . . . . . . . . . . 40 V
Collector-Collector Voltage (BVCC) . . . . . . . . . . . . . . . . . . 40 V
Emitter-Emitter Voltage (BVEE) . . . . . . . . . . . . . . . . . . . . 40 V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Total Power Dissipation
Case Temperature
≤ 40°C2 . . . . . . . . . . . . . . . . . . . . . 1.8 W
Ambient Temperature
≤ 70°C3 . . . . . . . . . . . . . . . . 500 mW
Operating Temperature Range
MAT02E, F . . . . . . . . . . . . . . . . . . . . . . . . . –25
°C to +85°C
ORDERING GUIDE
VOS max
Temperature
Package
Model
(TA = 25 C)
Range
Option
MAT02EH
50
V
–25
°C to +85°C
TO-78
MAT02FH
150
V
–25
°C to +85°C
TO-78
Operating Junction Temperature . . . . . . . . . . –55
°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . 300
°C
Junction Temperature . . . . . . . . . . . . . . . . . . –65
°C to +150°C
NOTES
1Absolute maximum ratings apply to both DICE and packaged devices.
2Rating applies to applications using heat sinking to control case temperature.
Derate linearly at 16.4 mW/
°C for case temperature above 40°C.
3Rating applies to applications not using a heat sinking; devices in free air only.
Derate linearly at 6.3 mW/
°C for ambient temperature above 70°C.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MAT02FHZ | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT03FHZ | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-03FH | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-03EH | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT03GBC | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAT02EHZ | 制造商:Analog Devices 功能描述: |
| MAT02FH | 制造商:Analog Devices 功能描述:IC TRANSISTOR MATCHED MONO |
| MAT02FHZ | 制造商:Analog Devices 功能描述: |
| MAT02NBC | 制造商:Analog Devices 功能描述: |
| MAT03 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Low Noise, Matched Dual PNP Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。