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參數(shù)資料
| 型號(hào)： | MAPRST1030-1KS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 179K |
| 代理商： | MAPRST1030-1KS |
MAPRST1030-1KS
M/A-COM Products
Released, 30 May 07
Avionics Pulsed Power Transistor
1000W, 1030 MHz, 10μs Pulse, 1% Duty
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Typical RF Performance
Freq.
(MHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Ic
(A)
Eff
(%)
RL
(dB)
VSWR-S
(1.5:1)
VSWR-T
(10:1)
P1dB Overdrive
Pout
Δ Po
1030
134
1000
8.74
39.5
50.8
-21.3
S
P
1180
0.74
Note:
ΔPo(dB) is the difference between Pout at 1dB overdrive and Pout at Pout = 1000W.
RF Power Transfer Curve
(Output Power Vs. Input Power)
700
800
900
1000
1100
1200
100
110
120
130
140
150
160
170
Input Power (Watts)
O
u
p
u
tP
o
w
e
r(W
a
tts
)
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PDF描述 |
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| MAPRST2729-170M | S BAND, Si, NPN, RF POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPRST1214-030UF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RADAR PULSED POWER TRANSISTOR |
| MAPRST1214-150UF | 功能描述:射頻MOSFET電源晶體管 1.2-1.4GHz 150W Gain: 7.4dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPRST1214-150UF_07 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 150W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty |
| MAPRST1214-30UF | 功能描述:射頻MOSFET電源晶體管 1.2-1.4GHz 30W Gain:7.5dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPRST1214-6UF | 功能描述:射頻MOSFET電源晶體管 1.2-1.4GHz 6W Gain: 8.75dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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