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參數(shù)資料
| 型號： | MAPRST0002 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 138K |
| 代理商： | MAPRST0002 |
Radar Pulsed Power Transistor
50W, 1.2-1.4 GHz, 150s Pulse, 10% Duty
M/A-COM Products
Released, 30 May 07
MAPRST0002
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Typical RF Performance
F (GHz)
ZIF ()
ZOF ()
1.2
3.7 - j4.6
4.4 + j0.8
1.3
3.5 - j4.5
3.7 - j1.0
1.4
3.1 - j4.5
2.2 - j1.1
RF Test Fixture Impedance
Gain vs. Frequency
Collector Efficiency vs. Frequency
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
ΔGain
(dB)
Ic
(A)
Eff
(%)
RL
(dB)
VSWR-S
(1.5:1)
VSWR-T
(3:1)
P1dB Overdrive
Pout
Δ Po
1.2
5.6
62.0
10.44
-
2.61
59.4
-14.7
S
P
68.6
0.44
1.3
5.6
57.6
10.11
2.60
55.3
-20.6
S
P
70.5
0.88
1.4
5.6
57.1
10.07
2.31
61.9
-13.9
S
P
62.2
0.37
-
0.36
Note:
ΔPo(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 5.6W.
9.0
9.5
10.0
10.5
11.0
1.20
1.25
1.30
1.35
1.40
Freq (GHz)
G
ain
(
d
B
)
45
50
55
60
65
1.20
1.25
1.30
1.35
1.40
Freq (GHz)
E
ff
ici
en
cy
(
%
)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPRST0912-350 | 功能描述:射頻MOSFET電源晶體管 960-1215MHz 350W Gain: 9.4dB min RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPRST0912-50 | 功能描述:射頻MOSFET電源晶體管 960-1215MHz 50W Gain: 9.1dB min RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPRST1030-1KS | 功能描述:射頻MOSFET電源晶體管 1030MHz 1000W Gain: 8.0dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPRST1214-030UF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RADAR PULSED POWER TRANSISTOR |
| MAPRST1214-150UF | 功能描述:射頻MOSFET電源晶體管 1.2-1.4GHz 150W Gain: 7.4dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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