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參數(shù)資料
| 型號(hào)： | MAPR-002729-170M00 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | MAPR-002729-170M00 |
Radar Pulsed Power Transistor
170W, 2.7-2.9 GHz, 100s Pulse, 10% Duty
M/A-COM Products
Released, 29 Jun 07
MAPR-002729-170M00
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 82.94.844.8296 / Fax: 82.94.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Typical RF Performance
F (GHz)
ZIF ()
ZOF ()
2.7
5.1 - j5.1
1.8 - j2.1
2.8
5.2 - j4.7
1.8 - j1.8
2.9
5.3 - j4.3
1.8 - j1.4
RF Test Fixture Impedance
Gain vs. Frequency
Collector Efficiency vs. Frequency
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Ic
(A)
Eff
(%)
RL
(dB)
VSWR-S
(1.5:1)
VSWR-T
(2:1)
2.7
24
224
9.69
12.1
51.4
-15.6
S
P
2.8
24
217
9.56
11.3
53.4
-14.7
S
P
2.9
24
196
9.11
10.3
53.0
-10.6
S
P
8.0
8.5
9.0
9.5
10.0
2.70
2.75
2.80
2.85
2.90
Freq (GHz)
G
ain
(
d
B
)
35
40
45
50
55
2.70
2.75
2.80
2.85
2.90
Freq (GHz)
E
ff
ici
en
cy
(
%
)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPR-002731-115M00 | 功能描述:射頻MOSFET電源晶體管 2.7-2.9GHz Gain7.6dB 115W VSWR: 2.1 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPR-1090-350S0 | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MAPRST0002 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty |
| MAPRST0912-350 | 功能描述:射頻MOSFET電源晶體管 960-1215MHz 350W Gain: 9.4dB min RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPRST0912-50 | 功能描述:射頻MOSFET電源晶體管 960-1215MHz 50W Gain: 9.1dB min RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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