參數(shù)資料
型號: MAPLST2122-090WF
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù): 2/5頁
文件大?。?/td> 233K
代理商: MAPLST2122-090WF
RF Power LDMOS Transistor, 2110 — 2170 MHz, 90W, 28V
MAPLST2122-090WF
2/18/2003
Preliminary
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
1
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
1
Adc
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2)
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS @ 25C
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 Adc)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
IDSS
1
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 60 mA)
VGS(th)
2
2.6
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 750 mA)
VDS(Q)
3
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 A)
VDS(on)
TBD
Vdc
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
Gm
4.0
S
DYNAMIC CHARACTERISTICS @ 25C
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Coss
98
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
4.5
pF
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps
11
dB
Two-Tone Drain Efficiency
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
EFF ()
33
%
Two-Tone Common-Source Amplifier Intermodulation
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD
-30
dBc
Input Return Loss
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL
-13
dB
Two-Tone Common-Source Amplifier Power Gain
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
11
dB
Two-Tone Drain Efficiency
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
EFF ()
33
%
Two-Tone Common-Source Amplifier Intermodulation
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
-30
dBc
Input Return Loss
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
-13
-9
dB
Output VSWR Tolerance
(VDD = 28 Vdc, POUT = 90 W PEP. IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz, VSWR = 10:1, All Phase Angles at Frequency of
Tests)
Ψ
No Degradation In Output Power
Before and After Test
2
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