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參數(shù)資料
| 型號(hào)： | MAPLST0810-90CF |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | P-238, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 138K |
| 代理商： | MAPLST0810-90CF |
RF Power LDMOS Transistor, 865-960 MHz, 90W, 26V
MAPLST0810-90CF
5/14/04
Preliminary
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS @ 25C
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
—
1
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
3
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 A)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mA)
VDS(Q)
—
4.0
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 A)
VDS(on)
—
0.20
—
Vdc
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
Gm
—
7
—
S
DYNAMIC CHARACTERISTICS @ 25C
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
98
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
4.5
—
pF
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture)
Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W)
GP
—
18
—
dB
Drain Efficiency
(VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W)
EFF ()
—
50
—
%
Input Return Loss
(VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W)
IRL
—
12
—
dB
Two-Tone Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz,
POUT = 90 PEP)
GP
—
18
—
dB
Output VSWR Tolerance
(VDD = 26 Vdc, IDQ = 700 mA, f = 900 MHz, POUT = 90 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
Two-Tone Intermodulation Distortion
(VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz,
POUT = 90 PEP)
IMD
—
-30
—
dBc
Two-Tone Drain Efficiency
(VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz,
POUT = 90 PEP)
EFF ()
—
38
—
%
2
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