參數(shù)資料
型號: MAP6KE9.1ATRE3
廠商: MICROSEMI CORP-IRELAND
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 320K
代理商: MAP6KE9.1ATRE3
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01007 Rev A, June 2010
High Reliability Product Group
Page 4 of 4
GRAPHS
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
10,000
P
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(P
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in
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rc
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t
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f
2
5
o C
R
a
ting
TL = 25
oC
50
30
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
P
PP
P
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C
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a
p
a
c
it
a
n
c
e
-
P
ic
o
fa
ra
d
s
tw
– Pulse Width -
s
FIGURE 1 – Peak Pulse Power vs. Pulse Time
Test waveform parameters:
tr=10
s, tw=1000 s
FIGURE 2 – Pulse waveform for
exponential surge
TL Lead temperature °C
FIGURE 3 – Derating curve
V(BR) Breakdown Voltage - Volts
FIGURE 4 – P6KE Typical Capacitance
vs. Breakdown Voltage
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