參數(shù)資料
型號(hào)： MAC9
廠(chǎng)商： Motorola, Inc.
英文描述： TRIACS 8.0 AMPERES RMS 400 thru 800 VOLTS
中文描述： 雙向可控硅8.0安培有效值到400 800伏特
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 78K
代理商： MAC9
3–50
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
IDRM
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25
°
C
TJ = 125
°
C
—
—
—
—
0.01
2.0
mA
ON CHARACTERISTICS
VTM
Peak On-State Voltage*
(ITM =
±
11 A Peak)
—
1.2
1.6
Volts
IGT
Continuous Gate Trigger Current (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
10
10
10
16
18
22
50
50
50
mA
IH
Hold Current
(VD = 12 V, Gate Open, Initiating Current =
±
150 mA)
—
30
50
mA
IL
Latch Current (VD = 24 V, IG = 50 mA)
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–)
—
—
20
30
50
80
mA
VGT
Gate Trigger Voltage (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
0.5
0.5
0.5
0.69
0.77
0.72
1.5
1.5
1.5
Volts
DYNAMIC CHARACTERISTICS
(di/dt)c
Rate of Change of Commutating Current* See Figure 10.
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/
μ
s,
Gate Open, TJ = 125
°
C, f = 250 Hz, No Snubber)
CL = 10
μ
F
LL = 40 mH
6.5
—
—
A/ms
dv/dt
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125
°
C)
*Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
500
—
—
V/
μ
s
Figure 1. RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMP)
125
120
115
110
105
100
8
7
6
5
4
3
2
1
0
T
°
Figure 2. On-State Power Dissipation
IT(RMS), ON-STATE CURRENT (AMP)
8
7
6
5
4
3
2
1
0
12
10
8
6
4
2
P
0
α
= 120, 90, 60, 30
°
α
= 180
°
α
= 30
°
DC
DC
180
°
120
°
90
°
60
°
相關(guān)PDF資料
PDF描述
MAC9M TRIACS 8.0 AMPERES RMS 400 thru 800 VOLTS
MAC9N TRIACS 8.0 AMPERES RMS 400 thru 800 VOLTS
MAR2909ND RADIATION HARD MICROPROGRAM SEQUENCER
MAQ2909FS RADIATION HARD MICROPROGRAM SEQUENCER
MAQ2909NB RADIATION HARD MICROPROGRAM SEQUENCER
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