1
Motorola Thyristor Device Data
Motorola, Inc. 1996
. . . designed for use in solid state relays, MPU interface, TTL logic and any other light
industrial or consumer application. Supplied in an inexpensive TO–92 package which
is readily adaptable for use in automatic insertion equipment.
One–Piece, Injection–Molded Unibloc Package
Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of
Trigger Sources, and Especially for Circuits that Source Gate Drives
All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters
and Reliability
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage
(Gate Open, TJ = –40 to +110
°
C)(1)
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC97–4, MAC97A4
MAC97–6, MAC97A6
MAC97–8, MAC97A8
VDRM
200
400
600
Volts
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (TC = +50
°
C)
IT(RMS)
0.8
Amp
Peak Non–repetitive Surge Current
(One Full Cycle, 60 Hz, TA = 110
°
C)
ITSM
8.0
Amps
Circuit Fusing Considerations
TJ = –40 to +110
°
C (t = 8.3 ms)
I2t
0.26
A2s
Peak Gate Voltage (t
2.0 s)
VGM
PGM
PG(AV)
IGM
TJ
Tstg
5.0
Volts
2.0 s)
5.0
Watts
Average Gate Power (TC = 80
°
C, t
Peak Gate Current (t
8.3 ms)
0.1
Watt
2.0 s)
1.0
Amp
Operating Junction Temperature Range
–40 to +110
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
75
°
C/W
Thermal Resistance, Junction to Ambient
200
°
C/W
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be
tested with a constant current source such that the voltage ratings of the devices are
exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MAC97/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04
TO–226AA, STYLE 12
(TO–92)
TRIACs
0.8 AMPERE RMS
200 — 600 VOLTS
Motorola preferred devices
MT1
G
MT2
MT1
MT2
G
(Device Date Code
9625 and Up)
REV 2