參數(shù)資料
型號(hào): MAC8SN
廠(chǎng)商: MOTOROLA INC
元件分類(lèi): 晶閘管
英文描述: TRIACS 8 AMPERES RMS 400 THRU 800 VOLTS
中文描述: 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
封裝: CASE 221A, 4 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 753K
代理商: MAC8SN
2
Data Sheets
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25
°
C
TJ = 110
°
C
IDRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage* (ITM =
Continuous Gate Trigger Current (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
11A)
VTM
IGT
1.85
Volts
.8
.8
.8
2.0
3.0
3.0
5.0
5.0
5.0
mA
Hold Current (VD = 12V, Gate Open, Initiating Current =
Latching Current (VD = 24V, IG = 5mA)
MT2(+), G(+)
MT2(–), G(–)
MT2(+), G(–)
150mA)
IH
IL
1.0
3.0
10
mA
2.0
2.0
2.0
5.0
10
5.0
15
20
15
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
VGT
0.45
0.45
0.45
0.62
0.60
0.65
1.5
1.5
1.5
Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = 400V, ITM = 3.5A, Commutating dv/dt = 10V /sec,
Gate Open, TJ = 110 C, f= 500 Hz, Snubber: CS = 0.01 F, RS = 15 ,
see Figure 16.)
(dv/dt)c
8.0
10
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = Rate VDRM, Exponential Waveform, RGK = 510 , TJ = 110
°
C)
* Indicates Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
dv/dt
25
75
V/ s
0
2
IT(RMS), RMS ON–STATE CURRENT (AMPS)
4
6
8
10
12
60
70
80
90
100
110
Figure 1.0 RMS Current Derating
90
°
DC
= 30 and 60
°
0
2
4
6
8
10
12
0
5
10
15
20
25
Figure 2.0 Maximum On–State Power Dissipation
IT(RMS), RMS ON–STATE CURRENT (AMPS)
90
°
60
°
α
α
= CONDUCTION ANGLE
M
°
C
TC
(
180
°
120
°
180
°
= 30
°
α
α
= CONDUCTION ANGLE
DC
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