參數(shù)資料
型號: MAC8SMG
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Sensitive Gate Triacs Silicon Bidirectional Thyristors
中文描述: 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 1/7頁
文件大?。?/td> 85K
代理商: MAC8SMG
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 5
1
Publication Order Number:
MAC8S/D
MAC8SD, MAC8SM, MAC8SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
Features
Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
Uniform Gate Trigger Currents in Three Quadrants; Q1, Q2, and Q3
High Immunity to dv/dt 25 V/ s Minimum at 110
°
C
High Commutating di/dt 8.0 A/ms Minimum at 110
°
C
Maximum Values of I
GT
, V
GT
and I
H
Specified for Ease of Design
On-State Current Rating of 8 Amperes RMS at 70
°
C
High Surge Current Capability 70 Amperes
Blocking Voltage to 800 Volts
Rugged, Economical TO220AB Package
PbFree Packages are Available*
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(T
= 40 to 110
°
C,
Sine Wave, 50 to 60 Hz, Gate Open)
MAC8SD
MAC8SM
MAC8SN
V
DRM,
V
RRM
400
600
800
V
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 70
°
C)
I
T(RMS)
8.0
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J
= 110
°
C)
I
TSM
70
A
Circuit Fusing Consideration (t = 8.3 ms)
I
2
t
20
A
2
sec
Peak Gate Power
(Pulse Width
1.0 s, T
C
= 70
°
C)
P
GM
16
W
Average Gate Power
(t = 8.3 ms, T
C
= 70
°
C)
P
G(AV)
0.35
W
Operating Junction Temperature Range
T
J
40 to +110
°
C
Storage Temperature Range
T
stg
40 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
8 AMPERES RMS
400 thru 800 VOLTS
TO220AB
CASE 221A09
STYLE 4
1
http://onsemi.com
MAC8SxG
AYWW
MARKING
DIAGRAM
x
A
Y
WW
G
= D, M, or N
= Assembly Location
= Year
= Work Week
= PbFree Package
23
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MAC8SD
TO220AB
50 Units / Rail
MAC8SN
TO220AB
50 Units / Rail
MAC8SDG
TO220AB
(PbFree)
50 Units / Rail
MAC8SNG
TO220AB
(PbFree)
50 Units / Rail
MAC8SM
TO220AB
50 Units / Rail
MAC8SMG
TO220AB
(PbFree)
50 Units / Rail
MT1
G
MT2
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
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