參數(shù)資料
型號(hào)： MAC7141VFU40
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 32-BIT, FLASH, 40 MHz, RISC MICROCONTROLLER, PQFP100
封裝： 14 X 14 MM, 0.50 MM PITCH, LQFP-100
文件頁(yè)數(shù)： 4/56頁(yè)
文件大?。?/td> 1216K
代理商： MAC7141VFU40
MAC7100 Microcontroller Family Hardware Specifications, Rev. 1.2
Preliminary
Electrical Characteristics
Freescale Semiconductor
12
Table 15. MAC71x1/6 1 Device Supply Current Characteristics – 40 MHz
NOTES:
1. MAC71x2 characteristics are to be determined (TBD).
Conditions shown in Table 7, with fSYS = 40 MHz.
Num
C
Rating
Symbol
Typ
Max
Unit
F1
P Run Supply Current, Single Chip
IDDRreg
100
130
mA
F2
C Doze Supply Current
IDDDreg
Run
≥ Doze ≥ Pseudo Stop
F3
P Pseudo Stop Supply Current
(OSC on)
–40
° C 2
2. 85
°C, 105°C, and 125°C refer to the "C", "V", and "M" Temperature Options, respectively.
IDDPSreg
400 / 500 3
3. RTI disabled / enabled.
600 / 700 3
μA
P25
° C 2
400 / 500 3
600 / 700 3
μA
C85
° C 2
800 / 1000 3
2000 / 2500 3
μA
C105
° C 2
1200 / 1500 3
3500 / 4000 3
μA
P125
° C 2
1500 / 2000 3
5500 / 6000 3
μA
F4
P Stop Supply Current
(TJ = TA assumed)
–40
° C 2
IDDSreg
30
150
μA
P25
° C 2
30
150
μA
C85
° C 2
330
2500
μA
C105
° C 2
470
3500
μA
P125
° C 2
660
5000
μA
Table 16. MAC71x1/6 1 Device Supply Current Characteristics – 50 MHz
NOTES:
1. MAC71x2 characteristics are to be determined (TBD).
Conditions shown in Table 7, with fSYS = 50 MHz.
Num
C
Rating
Symbol
Typ
Max
Unit
G1
P Run Supply Current, Single Chip
IDDRreg
120
150
mA
G2
C Doze Supply Current
IDDDreg
Run
≥ Doze ≥ Pseudo Stop
G3
P Pseudo Stop Supply Current
(OSC on)
–40
° C 2
2. 85
°C, 105°C, and 125°C refer to the "C", "V", and "M" Temperature Options, respectively.
IDDPSreg
400 / 500 3
3. RTI disabled / enabled.
600 / 700 3
μA
P25
° C 2
400 / 500 3
600 / 700 3
μA
C85
° C 2
800 / 1000 3
2000 / 2500 3
μA
C105
° C 2
1200 / 1500 3
3500 / 4000 3
μA
P125
° C 2
1500 / 2000 3
5500 / 6000 3
μA
G4
P Stop Supply Current
(TJ = TA assumed)
–40
° C 2
IDDSreg
30
150
μA
P25
° C 2
30
150
μA
C85
° C 2
330
2500
μA
C105
° C 2
470
3500
μA
P125
° C 2
660
5000
μA
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