參數(shù)資料
型號: MAC4DLMT4
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Sensitive Gate Triacs Silicon Bidirectional Thyristors
中文描述: 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝: PLASTIC, CASE 369C DPAK-3
文件頁數(shù): 3/6頁
文件大?。?/td> 131K
代理商: MAC4DLMT4
3
Motorola Thyristor Device Data
Figure 1. RMS Current Derating
Figure 2. On–State Power Dissipation
Figure 3. On–State Characteristics
Figure 4. Transient Thermal Response
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.5
4.0
0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
110
105
100
IT(RMS), RMS ON–STATE CURRENT (AMPS)
3.0
4.0
0
4.0
2.0
1.0
0
4.0
0
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
100
10
1.0
0.1
t, TIME (ms)
1.0
0.1
1.0
0.1
0.01
3.5
–25
20
–40
TJ, JUNCTION TEMPERATURE (
°
C)
8.0
3.0
2.0
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
65
–40
0.8
0.6
0.2
20
5.0
T
P
I
T
r
95
90
0.5
1.0
1.5
2.0
3.0
3.5
1.0
2.0
3.0
5.0
6.0
1.0
0.5
3.0
10
100
1000
10 K
,
I
50
110
65
4.0
5.0
110
35
50
0.4
V
°
,
(
,
80
5.0
dc
180
°
120
°
90
°
60
°
= 30
°
dc
180
°
120
°
90
°
60
°
TYPICAL @ TJ = 25
°
C
MAXIMUM @ TJ = 25
°
C
MAXIMUM @ TJ = 110
°
C
ZJC(t) = RJC(t)r(t)
Q3
Q2
Q1
Q3
Q2
Q1
α
α
= CONDUCTION ANGLE
α
α
= CONDUCTION ANGLE
= 30
°
1.0
1.0
2.5
3.5
0.5
1.5
2.5
2.0
1.5
–10
35
95
6.0
7.0
Q4
–10
95
80
Q4
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