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參數(shù)資料
| 型號(hào)： | MAC321-10 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIACs 20 AMPERES RMS 200 thru 800 VOLTS |
| 中文描述： | 800 V, 20 A, TRIAC, TO-220AB |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 106K |
| 代理商： | MAC321-10 |
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25
°
C
TJ = +125
°
C
IDRM
—
—
—
—
10
2.0
μ
A
mA
Peak On-State Voltage (Either Direction)
(ITM = 28 A Peak; Pulse Width
2.0 ms, Duty Cycle
2.0%)
VTM
—
1.4
1.7
Volts
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
IGT
—
—
—
—
—
—
100
100
100
mA
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
(Main Terminal Voltage = Rated VDRM, RL = 10 k
, TJ = +125
°
C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
VGT
—
—
—
0.2
—
—
—
—
2.0
2.0
2.0
—
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
IH
—
—
100
mA
Turn-On Time
(VD = Rated VDRM, ITM = 28 A, IGT = 120 mA,
Rise Time = 0.1
μ
s, Pulse Width = 2.0
μ
s)
tgt
—
1.5
—
μ
s
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open)
TJ = 25
°
C
TJ = +125
°
C
dv/dt(s)
500
200
—
—
—
—
V/
μ
s
110
120
130
2
4
IT(RMS), RMS ON-STATE CURRENT (AMP)
6
8
10
12
60
70
80
90
100
14
16
dc
0
Figure 1. RMS Current Derating
5
40
35
30
25
20
15
10
20
18
Figure 2. On-State Power Dissipation
50
0
2
4
IT(RMS), RMS ON-STATE CURRENT (AMP)
6
8
10
12
14
16
0
20
18
α
= 30
°
60
°
90
°
180
°
α
= CONDUCTION
ANGLE
α
α
α
= CONDUCTION
ANGLE
α
α
P
T
°
180
°
dc
90
°
60
°
α
= 30
°
TYPICAL CHARACTERISTICS
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