參數(shù)資料
型號(hào): MAC320-4FP
廠商: MOTOROLA INC
元件分類(lèi): 晶閘管
英文描述: ISOLATED TRIACs THYRISTORS 20 AMPERES RMS 200 thru 800 VOLTS
中文描述: 200 V, 20 A, TRIAC
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 118K
代理商: MAC320-4FP
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC320FP Series) or
Four Modes (MAC320AFP Series)
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125
°
C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC320-4FP, MAC320A4FP
MAC320-6FP, MAC320A6FP
MAC320-8FP, MAC320A8FP
MAC320-10FP, MAC320A10FP
VDRM
200
400
600
800
Volts
Peak Gate Voltage
On-State RMS Current (TC = +75
°
C, Full Cycle Sine Wave 50 to 60 Hz)(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +75
°
C,
preceded and followed by rated current)
VGM
IT(RMS)
ITSM
10
Volts
20
Amps
150
Amps
Peak Gate Power (TC = +75
°
C, Pulse Width = 2
μ
s)
Average Gate Power (TC = +75
°
C, t = 8.3 ms)
Peak Gate Current
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
20
Watts
0.5
Watt
2
Amps
RMS Isolation Voltage (TA = 25
°
C, Relative Humidity
Operating Junction Temperature
20%)
1500
Volts
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
CS
R
θ
JA
1.8
°
C/W
Thermal Resistance, Case to Sink
2.2 (typ)
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the
plastic body.
Order this document
by MAC320FP/D
SEMICONDUCTOR TECHNICAL DATA
MT1
G
MT2
CASE 221C-02
STYLE 3
ISOLATED TRIACs
THYRISTORS
20 AMPERES RMS
200 thru 800 VOLTS
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