參數(shù)資料
型號(hào): MAC228-4FP
廠(chǎng)商: MOTOROLA INC
元件分類(lèi): 晶閘管
英文描述: TRIACs 8 AMPERES RMS 200 thru 800 VOLTS
中文描述: 200 V, 8 A, TRIAC
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 92K
代理商: MAC228-4FP
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
CS
R
θ
JA
2.2
°
C/W
Thermal Resistance, Case to Sink
2.2 (typ)
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
(VD = Rated VDRM, Gate Open) TJ = 25
°
C
TJ = 110
°
C
IDRM
10
2
μ
A
mA
Peak On-State Voltage
(ITM = 11 A Peak, Pulse Width
2 ms, Duty Cycle
2%)
VTM
1.8
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
IGT
5
10
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
(VD = Rated VDRM, TC = 110
°
C, RL = 10 k)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
VGT
0.2
0.2
2
2.5
Volts
Holding Current
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
IH
15
mA
Gate-Controlled Turn-On Time
(VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA)
tgt
1.5
μ
s
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 110
°
C)
dv/dt
25
V/
μ
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80
°
C)
dv/dt(c)
5
V/
μ
s
°
T
C
2.0
FIGURE 1 – RMS CURRENT DERATING
FIGURE 2 – ON-STATE POWER DISSIPATION
110
104
92
0
1.0
80
5.0
86
dc
IT(RMS), RMS ON-STATE CURRENT (AMP)
98
α
α
= 30
°
90
°
60
°
α
α
= CONDUCTION ANGLE
°
120
°
180
°
120
°
3.0
4.0
6.0
7.0
8.0
2.0
0
1.0
5.0
3.0
4.0
6.0
7.0
8.0
10
8.0
6.0
4.0
2.0
0
α
= CONDUCTION ANGLE
α
α
TJ
110
°
C
dc
α
= 180
°
90
°
60
°
120
°
30
°
IT(RMS), RMS ON-STATE CURRENT (AMP)
(
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