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參數(shù)資料
| 型號： | MAC12SNG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 800 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 68K |
| 代理商： | MAC12SNG |
MAC12SM, MAC12SN
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
2.2
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25
°
C
T
J
= 110
°
C
I
DRM
,
I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I
TM
=
±
17 A)
V
TM
1.85
V
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
GT
1.5
2.5
2.7
5.0
5.0
5.0
mA
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current =
±
200 mA)
I
H
2.5
10
mA
Latching Current (V
D
= 12 V, I
G
= 5 mA)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
L
3.0
5.0
3.0
15
20
15
mA
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
V
GT
0.45
0.45
0.45
0.68
0.62
0.67
1.5
1.5
1.5
V
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(V
D
= 400 V, I
TM
= 3.5 A, Commutating dV/dt = 10 V/ s, Gate Open, T
J
= 110
°
C,
f = 500 Hz, Snubber: Cs = 0.01 f, Rs = 15 )
(di/dt)
c
8.0
10
A/ms
Critical Rate of Rise of Off-State Voltage
(V
D
= 67% V
DRM
, Exponential Waveform, R
GK
= 1 K , T
J
= 110
°
C)
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 sec; diG/dt = 1 A/ sec; Igt = 100 mA; f = 60 Hz
2. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dV/dt
15
40
V/ s
di/dt
10
A/ s
+ Current
+ Voltage
V
TM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
I
DRM
at V
DRM
on state
off state
I
RRM
at V
RRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2
V
TM
I
H
Maximum On State Voltage
Holding Current
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