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參數(shù)資料
| 型號： | MAAP-000038-PKG003 |
| 英文描述： | Amplifier, Power, 1.2W 9.0-12.0 GHz |
| 中文描述： | 功率放大器，功率，頻率的1.2W 9.0-12.0 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 242K |
| 代理商： | MAAP-000038-PKG003 |
Amplifier, Power, 1.2W
9.0-12.0 GHz
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
1
Rev —
Advance Information
MAAP-000038-PKG003
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Supply Voltage
Gate Supply Voltage
Input Power
V
DD
V
GG
P
IN
4.0
-2.4
8.0
-2.0
16.0
10.0
-1.3
19.0
V
V
dBm
Junction Temperature
T
J
150
°C
Package Base Temperature
T
B
Note 3
°C
Thermal Resistance
Θ
JC
12.3
°C/W
Features
2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG Process
5x5 mm 20 Lead MLP Package
Description
The
MAAP-000038-PKG003
is a packaged, 3-stage, 1.2 W power
amplifier with on-chip bias networks in a 20 lead MLP package,
allowing easy assembly. This product is fully matched to 50
ohms on both the input and output. It can be used as a power
amplifier stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s
MSAG
process
manufacturing processes, planar processing of ion implanted
transistors, multiple implant capability enabling power, low-
noise, switch and digital FETs on a single chip, and polyimide
scratch
protection
for
ease
manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents
hydrogen poisoning when employed in hermetic packaging.
Maximum Operating Conditions
1
features
robust
silicon-like
of
use
with
automated
Parameter
Symbol
Absolute Maximum
Units
Input Power
P
IN
21.0
dBm
Drain Supply Voltage
V
DD
+12.0
V
Gate Supply Voltage
V
GG
-3.0
V
Quiescent Drain Current (No RF, 40% IDSS)
I
DQ
1.15
A
Junction Temperature
T
J
180
°C
Storage Temperature
T
STG
-55 to +150
°C
Quiescent DC Power Dissipated (No RF)
P
DISS
7.5
W
Processing Temperature
230
°C
1. Operation beyond these limits may result in permanent damage to the part.
Primary Applications
Point-to-Point Radio
Weather Radar
Airborne Radar
2. Operation outside of these ranges may reduce product reliability.
3. Maximum Package Base Temperature = 150°C —
Θ
JC
* V
DD
* I
DQ
Recommended Operating Conditions
2
MACOM
YYWW
AP0038
XXXX
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PDF描述 |
|---|---|
| MAAP-000042-PKG003 | Amplifier, Power, 1W, X/Ku-Band 12-16 GHz |
| MAAP-000044-PKG003 | Amplifier, Power, 0.5W 12.7-15.4 GHz |
| MAAP-000066-PKG003 | Amplifier, Power, 2.0W 2.5-5.0 GHz |
| MAAP-000067-MCH000 | Amplifier, Power, 2W |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MAAP-000042-PKG003 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1W, X/Ku-Band 12-16 GHz |
| MAAP-000042-SMB003 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1W, X/Ku-Band 12-16 GHz |
| MAAP-000044-PKG003 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 0.5W 12.7-15.4 GHz |
| MAAP-000044-SMB003 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 0.5W 12.7-15.4 GHz |
| MAAP-000064-PKG003 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 2W 6.5-9.5 GHz |
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