參數(shù)資料
型號(hào): MAAP-000021-SMB003
英文描述: Amplifier, Power, 2W 5.0-8.5 GHz
中文描述: 放大器,電源,2W的5.0-8.5千兆赫
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 436K
代理商: MAAP-000021-SMB003
Amplifier, Power, 2W
5.0-8.5 GHz
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
Rev A
Preliminary Datasheet
1
MAAP-000021-PKG003
RoHS
Compliant
Features
2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG Process
5x5 mm 20 Lead MLP Package
Description
The
MAAP-000021-PKG0003
is a 2-stage 2 W power amplifier
with on-chip bias networks in a 20 lead MLP package, allowing
easy assembly. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested to ensure performance
compliance. The part is fabricated using M/A-COM’s GaAs
Multifunction Self-Aligned Gate (MSAG) Process.
Electrical Characteristics: T
C
= 30°C
1
, Z
0
= 50
Ω
, V
DD
= 8V, I
DQ
= 600 mA
2
, P
in
= 18dBm, R
G
= 120
Primary Applications
Multiple Band Point-to-Point Radio
SatCom
ISM Band
MACOM
XXXX
AP021G
YYWW
Also Available in:
SAMPLE BOARDS
Description
Die
Ceramic Package
Ceramic Package
Plastic Package
Part Number
MAAPGM0021-DIE
MAAPGM0021
MAAPGM0021-SMB
MAAP-000021-SMB003
Parameter
Symbol
Typical
Units
Bandwidth
f
5.0-8.5
GHz
Output Power
POUT
33
dBm
1-dB Compression Point
P1dB
32
dBm
Small Signal Gain
G
17
dB
Power Added Efficiency
PAE
35
%
Input VSWR
VSWR
1.6
Output VSWR
VSWR
2.5:1
Gate Supply Current
I
GG
<8
mA
Drain Supply Current, under RF Drive
I
DD
0.9
A
Output Third Order Intercept
OTOI
40
dBm
3
rd
Order Intermodulation Distortion,
Single Carrier Level = 22 dBm
IM3
-13
dBm
1.
2.
T
= Case Temperature.
Adjust V
GG
between –2.6 to-1.2 to achieve indicated I
DQ
.
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