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參數(shù)資料
| 型號： | MAAM12000-A1G |
| 英文描述： | Low Noise GaAs MMIC Amplifier 1.2 - 1.75 GHz |
| 中文描述： | 砷化鎵單片低噪聲放大器1.2 - 1.75吉赫 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 185K |
| 代理商： | MAAM12000-A1G |
Low Noise GaAs MMIC Amplifier
1.2 - 1.75 GHz
MAAM12000-A1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
V4
1
RoHS
Compliant
Features
Low Noise Figure: 1.35 dB
High Gain: 26 dB
No External Components Required
DC Decoupled RF Input and Output
Lead-Free 8-Lead Ceramic Package
RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM’s MAAM12000-A1 is a wide band, low
noise, MMIC amplifier housed in a lead-free, small
8-lead ceramic package. It includes two integrated
gain stages and employs series inductive feedback
to obtain excellent noise figure and a good, 50-ohm,
input and output impedance match over the 1.2 to
1.75 GHz band. The MAAM12000-A1 is fully
monolithic, requires no external components and is
provided in a low-cost, user-friendly, microwave
package.
The MAAM12000-A1 is ideally suited to receivers in
GPS and DGPS applications and operates over both
the L1 and L2 frequency bands. Because of its wide
bandwidth, the MAAM12000-A1 can also be used as
a driver, buffer or IF amplifier in numerous
commercial and government system applications
that require high gain, excellent linearity and low
power consumption.
The MAAM12000-A1 is manufactured in-house
using a reliable, 0.5 micron, GaAs MESFET process.
This product is 100% RF tested to ensure
compliance to performance specifications.
Ordering Information
Part Number
Package
MAAM12000-A1
8-Lead Ceramic
MAAM12000-A1G
Gull Wing
Pin Configuration
1
Pin No.
Function
Pin No.
Function
1
Ground
5
V
DD
2
RF Input
6
Ground
3
Ground
7
RF Output
4
V
GG
8
Ground
Schematic
RF IN
GND
GND
V
GG
GND
GND
V
DD
RF OUT
Typical Biasing Configuration
and Functional Block Diagram
Absolute Maximum Ratings
2,3
Parameter
Absolute Maximum
V
DD
+7 V
V
GG
-10 V
Input Power
+20 dBm
Current
150 mA
Channel Temperature
+150°C
Operating Temperature
4
-55°C to +100°C
Storage Temperature
-65°C to +150°C
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. M/A-COM does not recommend sustained operation near
these survivability limits.
4. Typical thermal resistance (
θ
jc) = +110°C/W.
1. The package bottom must be connected to RF and DC
ground.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
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