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參數(shù)資料
| 型號(hào)： | MA80WK |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon epitaxial planar type |
| 中文描述： | SILICON, VHF BAND, MIXER DIODE |
| 封裝： | SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | MA80WK |
1
Publication date: April 2002
SKG00013BED
Band Switching Diodes
MA3Z080D, MA3Z080E
(MA80WA, MA80WK)
Silicon epitaxial planar type
For band switching
I
Features
Low forward dynamic resistance r
f
Less voltage dependence of diode capacity C
D
S-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I
Absolute Maximum Ratings
T
a
=
25
°
C
Note)*: Maximum ambient temperature during operation
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
I
F
35
V
Forward current (DC)
100
mA
Operating ambient temperature
*
T
opr
T
stg
25 to
+
85
55 to
+
150
°
C
°
C
Storage temperature
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
F
C
D
V
R
=
33 V
I
F
=
100 mA
V
R
=
6 V, f
=
1 MHz
I
F
=
2 mA, f
=
100 MHz
0.01
100
nA
Forward voltage (DC)
0.92
1.0
V
Diode capacitance
0.9
1.2
pF
Forward dynamic resistance
*
r
f
0.65
0.85
I
Electrical Characteristics
T
a
=
25
°
C
Note) 1. Each characteristic is a standard for individual diode
2. Rated input/output frequency: 100 MHz
3.*: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
EIAJ: SC-70
SMini3-G1 Package
2
±
0
1.3
±
0.1
0.3
+0.1
2.0
±
0.2
1
±
0
(
1
3
2
(0.65) (0.65)
0
±
0
0
±
0
0
0
+
–
0.15
+0.10
5
10
Internal Connection
Marking Symbol
MA3Z080D:
M1X
MA3Z080E:
M1Y
MA3Z080D
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode1, 2
Cathode 1, 2
MA3Z080E
1
2
3
1
2
3
D
E
Note) The part number in the parenthesis shows conventional part number.
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