
Schottky Barrier Diodes (SBD)
MA3J742
(MA742)
Silicon epitaxial planar type
1
Publication date: August 2001
SKH00056AED
For switching
I
Features
Two MA3X716 (MA716) is contained in one package (series
connection)
Low forward voltage V
F
, optimum for low voltage rectification
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
S-Mini type 3-pin package
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RM
30
V
Peak reverse voltage
30
V
Forward current (DC)
Single
I
F
30
mA
Series
*
20
Peak forward current
Single
I
FM
150
mA
Series
*
110
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
Internal Connection
Marking Symbol: M1U
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
F1
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
= 10 mA
I
rr
=
1 mA, R
L
=
100
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 k
, C
L
=
10 pF
1
μ
A
Forward voltage (DC)
0.4
V
V
F2
C
t
t
rr
1
Terminal capacitance
1.5
pF
Reverse recovery time
*
1
ns
Detection efficiency
h
65
%
I
Electrical Characteristics
T
a
=
25
°
C
1
2
3
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
=
0.35 ns
δ =
0.05
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
rr
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
1 :Anode 1
2 :Cathode 2
3 :Cathode 1
Anode 2
SMini3-F1 Package
Unit: mm
0.3
2.0
±0.2
1.3
±0.1
(01
3
(0.2
0.9
±0.1
2
±
1
±
0
(
(
5
°
5
°
+0.1
–0
0.15
+0.1
Note)*: Value per chip
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3.*: t
rr
measuring instrument
Note) The part number in the parenthesis shows conventional part number.