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參數(shù)資料
| 型號： | MA726 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Diodes (SBD) |
| 中文描述： | SILICON, UHF BAND, MIXER DIODE |
| 封裝： | ROHS COMPLIANT, MINI4-G1, SC-61, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 82K |
| 代理商： | MA726 |
Schottky Barrier Diodes (SBD)
MA4X726
(MA726)
Silicon epitaxial planar type
1
Publication date: August 2001
SKH00106AED
Internal Connection
Marking Symbol: M1O
For super high speed switching
For small current rectification
I
Features
Two isolated elements are contained in one package, allowing
high-density mounting
Two MA3X721 (MA721) is contained in one package (two
diodes in a different direction)
I
F(AV)
=
200 mA rectification is possible
Mini type 4-pin package
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
30
V
Repetitive peak reverse-voltage
V
RRM
I
FM
30
V
Peak forward
Single
Double
*1
300
mA
current
225
Average forward
Single
Double
*1
I
F(AV)
200
mA
current
150
Non-repetitive peak
Single
Double
*1
I
FSM
1
A
forward-surge-current
*2
0.75
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
=
30 V
I
F
=
200 mA
V
R
=
0 V, f
=
1 MHz
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
50
μ
A
Forward voltage (DC)
V
F
C
t
t
rr
0.55
V
Terminal capacitance
30
pF
Reverse recovery time
*
3.0
ns
I
Electrical Characteristics
T
a
=
25
°
C
4
1
3
2
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
=
0.35 ns
δ =
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
EIAJ : SC-61
Mini4-G1 Package
2.90
+0.02
0.16
+0.1
0
±
5
°
10
°
0.60
+0.10
1
+
–
1
+
–
1
+
–
2
+
–
1.9
±0.2
(
(0.2)
(0.95)
(0.95)
0
3
4
2
1
0.5R
Note)*1: Value per chip
*2:
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 1 GHz
3.*: t
rr
measuring instrument
Note) The part number in the parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MA727 | Silicon epitaxial planar type |
| MA3X727 | Silicon epitaxial planar type |
| MA728 | Schottky Barrier Diodes (SBD) |
| MA2J728 | Schottky Barrier Diodes (SBD) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MA727 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
| MA728 | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| MA728TX | 制造商:Panasonic Electric Works 功能描述:0.03 A, SILICON, SIGNAL DIODE |
| MA729 | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| MA729WS | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
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